Abstract:Emerging silicon carbide (SiC) MOSFET power devices promise to displace silicon IGBTs from the majority of challenging power electronics applications by enabling superior efficiency and power density, as well as capability to operate at higher temperatures. This paper reports on the recent progress in development of 1200V SiC power MOSFETs. Two different chip sizes were fabricated and tested: 15A $({\bf 0.225}{\bf cm}\times {\bf 0.45cm})$ and 30A $({\bf 0.45}{\bf cm}\times {\bf 0.45cm})$ devices. First, the 30A MOSFETs were packaged as discrete components and static and switching measurements were performed. The device blocking voltage was 1200V and typical on-resistance was less than ${\bf 50}\ {\bf m}{\bf\Omega}$ with gate-source voltages of 0V and 20V, respectively. The total switching losses were 0.6 mJ, over five times lower than the competing devices. Next, a buck converter was built for evaluating longterm stability of the MOSFETs and typical switching waveforms are presented. Finally, the 15A MOSFETs were used for fabrication of 150A all-SiC modules. The module on-resistance values were in the range of ${\bf 10}\ {\bf m}{\bf\Omega}$, resulting in the best-in-class on-state voltage values of 1.5V at nominal current. The module switching losses were 2.3 mJ during turn-on and 1 mJ during turn-off, also significantly better than competing designs. The results validate performance advantages of the SiC MOSFETs, moving them a step closer to power electronics applications.

The Behaviour of Very High Current Density Power Mosfets

Analytical Model for High Current Density Trench Gate Mosfet

Static and Dynamic Behaviour of SiC JFET/Si MOSFET Cascade Configuration for High-Performance Power Switches

The New Generation of Power Semiconductor Devices

Dynamic Performance of 6.5kV/400A SiC MOSFET Module and its Gate Driver

Suppression of Bipolar Degradation in Deep-P Encapsulated 4H-SiC Trench MOSFETs up to Ultra-High Current Density

A comprehensive analysis of breakdown mechanisms in 4H-SiC MOSFET and JFET

Gate Current for MOSFETs with High k Dielectric Materials

Numerical Analysis of 4H-SiC MOSFET Design Including High-k Gate Dielectrics for Power electronic Applications

A Study on the Electrical Properties of High Voltage SiC Power MOSFET with Double Trench Structures

Design Analysis of 4H-SiC MOSFET for High Power Application

Behaviour of the CoolMOS Device and Its Body Diode

Bsim5 Mosfet Model

Origin of High On-State Current for Dopant-Segregated Schottky MOSFET.

Over dV/dt Robustness of Switching Behavior of SiC MOSFET and a Novel Main Junction Region Design

Recent advances in silicon carbide MOSFET power devices

Quantum Mechanical Consideration On Mosfet'S Characteristics And Scaling

Gate current modeling of high-k stack nanoscale MOSFETs

A Unified Drain Current Model for Nanoscale Double-Gate and Surrounding-Gate MOSFETs Incorporating Velocity Saturation

Comparison and insight into long-channel MOSFET drain current models