Comparison and insight into long-channel MOSFET drain current models

Lining Zhang,Jin He,Wen Wu,Guozeng Wang,Wen Wu,Wenping Wang,Ruonan Wang,Mansun Chan
2011-01-01
Abstract:In this paper we provide an insight into the drain current model for long-channel MOSFET devices. A new method to perform the integral of the rigorous Pao-Sah dual integral current is derived. From it, we demonstrate the error of the traditional charge sheet models in predicting the drain current compared with Pao-Sah's dual integral model, also provide the reason that Brews' charge sheet model fails to pass the self consistency tests reported previously. Three charge-sheet approximation models are tested in order to find a simple yet accurate drain current model for surface potential-based compact models.
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