Abstract:3D IC technologies can help to improve circuit performance and lower power consumption by reducing wirelength. Also, 3D IC technology can be used to realize heterogeneous system-on-chip design, by integrating different modules together with less interference with each other. In this paper, we propose a novel thermal-aware 3D cell placement approach, named T3Place, based on transforming a 2D placement with good wirelength to a 3D placement, with the objectives of half-perimeter wirelength, through-the-silicon (TS) via number and temperature. T3Place is composed of two steps, transformation from a 2D placement to a 3D placement and the refinement of the resulting 3D placement. We proposed and compared several different transformation techniques, including local stacking transformation (LST), folding-2, folding-4 and window-based stacking/folding transformation, and concluded that (i) LST can generate 3D placements with the least wirelength, (ii) the folding-based transformations result in 3D placements with the fewest TS vias, and (iii) the window-based stacking/folding transformations provide good TS via number and wirelength tradeoffs. For example, with four device layers, LST can reduce the wirelength by over 2times compared to the initial 2D placement, while window-based stacking/folding can provide over 10times variation in terms of the TS via number, thus adaptive to different manufacturing ability for TS via density. Moreover, we proposed a novel relaxed conflict-net (RCN) graph-based layer assignment method to further refine the 3D placements. Compared to LST results, thermal-aware RCN graph-based layer assignment algorithm (r = 10%) can further reduce the maximum on-chip temperature by 37%, with only 6% TS via number increase and 8% wirelength increase.

Signal Through-the-silicon Via Planning and Pin Assignment for Thermal and Wire Length Optimization in 3D ICs

Integrated Interlayer Via Planning And Pin Assignment For 3d Ics

Sensitivity analysis of through-silicon via (TSV) interconnects for 3-D ICs

Frequency- and temperature-dependent modeling of coaxial through-silicon vias for 3-D ICs

Electrothermal modelling and characterisation of submicron through-silicon carbon nanotube bundle vias for three-dimensional ICs

LP Based White Space Redistribution for Thermal Via Planning and Performance Optimization in 3D ICs

Rethinking Thermal Via Planning with Timing-Power-temperature Dependence for 3D ICs

Via assignment algorithm for hierarchical 3-D placement

Thermal-Aware 3D IC Placement Via Transformation

Optimization of 3D IC Routing Based on Thermal Equalization Analysis

Different designs of TSVs for 3D IC: Signal integrity analysis with cascaded scattering matrix

System-Level Analysis of 3D ICs with Thermal TSVs

Electrical-Thermal Co-Simulation For Through Silicon Via And Active Tier In 3-D Ic

Redundant Vias Insertion for Performance Enhancement in 3D ICs.

Integrated Algorithm for 3-D IC Through-Silicon Via Assignment

Efficient Thermal-Oriented 3D Floorplanning and Thermal Via Planning for Two-Stacked-die Integration

Thermal-aware Cell and Through-Silicon-via Co-Placement for 3D ICs.

Lagrangian relaxation based pin assignment and Through-Silicon Via planning for 3-D SoCs

Leakage-Aware TSV-Planning with Power-Temperature-Delay Dependence in 3D ICs.

Integrating Dynamic Thermal Via Planning with 3D Floorplanning Algorithm.

Whitespace insertion for through-silicon via planning on 3-D SoCs