Abstract:The discovery of ferroelectricity in both pure and doped HfO$_2$-based thin films have revitalized the interest in using ferroelectrics for nanoscale device applications. To take advantage of this silicon-compatible ferroelectric, fundamental questions such as the origin of ferroelectricity and better approach to controlled realization of ferroelectricity at the nanoscale need to be addressed. The emergence of robust polarization in HfO$_2$-based thin films is considered as the cumulative effect of various extrinsic factors such as finite-size effects and surface/interface effects of small grains, compressive stress, dopants, oxygen vacancies, and electric fields. The kinetic effects of phase transitions and their potential impacts on the emergence of ferroelectricity in HfO$_2$ at the nanoscale are not well understood. In this work, we construct the transition paths between different polymorphs of hafnia with density functional theory calculations and variable-cell nudged elastic band technique. We find that the transition barriers depend strongly on the mechanical boundary conditions and the transition from the tetragonal phase to the polar orthorhombic phase is a fast process kinetically under clamping. The effects of growth orientations and epitaxial strains on the relative stability of different phases of HfO$_2$ are investigated. The two orthorhombic phases, polar $Pca2_1$ and non-polar $Pbca$, become thermodynamically stable in (111)-oriented thin films over a wide range of epitaxial strain conditions. This work suggests a potential avenue to better stabilize the ferroelectric phase in HfO$_2$ thin films through substrate orientation engineering.

Deterministic Orientation Control of Ferroelectric HfO 2 Thin Film Growth by a Topotactic Phase Transition of an Oxide Electrode

Phase Transitions and Anti-Ferroelectric Behaviors in Hf1-xZrxO2 Films

Effects of Growth Orientations and Epitaxial Strains on Phase Stability of HfO$_2$ Thin Films

Stabilization of Competing Ferroelectric Phases of HfO 2 under Epitaxial Strain

Interface control of tetragonal ferroelectric phase in ultrathin Si-doped HfO2 epitaxial films

Stabilizing the Ferroelectric Phase of Hf 0.5 Zr 0.5 O 2 Thin Films by Charge Transfer

Orientation control of phase transition and ferroelectricity in Al-doped HfO2 thin films

Control of intrinsic ferroelectricity and structural phase in pure HfO2 films via crystalline orientation

Atomic-Scale Scanning of Domain Network in the Ferroelectric HfO2 Thin Film

Symmetry Engineering of Epitaxial Hf 0.5 Zr 0.5 O 2 Ultrathin Films

Stabilizing the Ferroelectric Phase of Hf_{0.5}Zr_{0.5}O_{2} Thin Films by Charge Transfer.

Controlling the crystallinity of HfO2 thin film using the surface energy-driven phase stabilization and template effect

Evolution of ferroelectricity with annealing temperature and thickness in sputter deposited undoped HfO$_2$ on silicon

Structural and Ferroelectric Transition in Few-Layer HfO2 Films by First Principles Calculations

Progress in Computational Understanding of Ferroelectric Mechanisms in HfO$_2$

Kinetically-stabilized Ferroelectricity in Bulk Singlecrystalline HfO2:Y without Wake-up Effects

Kinetical phase transition paths and phase stability in ferroelectric HfO 2

Ferroelectric domain nucleation and switching pathways in hafnium oxide

Evidence for Reversible Oxygen Ion Movement During Electrical Pulsing: Enabler of Emerging Ferroelectricity in Binary Oxides

Kinetically stabilized ferroelectricity in bulk single-crystalline HfO2:Y

Progress in computational understanding of ferroelectric mechanisms in HfO 2