InAs/GaAs Quantum Dot Intermixing by Dry Etching and Ion Implantation

Y. Arakawa,Y. Hiraishi,T. Shirai,J. Kwoen,Y. Matushima,H. Ishikawa,K. Utaka

DOI: https://doi.org/10.1109/ICIPRM.2019.8819072

2019-05-01

Abstract:In this paper, we applied the quantum dot intermixing (QDI) technique developed for 1550nm-band InAs QD to 1300nm-band InAs/GaAs QD. Two methods of defect introduction for QDI were employed such as ICP-RIE (Ar+) and ion implantation (B+). As a result, about 80nm PL wavelength peak shift was obtained for ICP-RIE when annealing was performed at 575°C, after etching down to 450 nm to the QD layer. On the other hand, about 110nm wavelength shift was obtained for B+ implantation at an acceleration voltage of 120 keV and a dose of $1.0\times 10^{14}/\mathbf{cm}^{2}$ and subsequent annealing.

Materials Science,Engineering,Physics