Abstract:Multilayered substrates, including thin plates of LiTaO3 (LT) bonded to silicon (Si) or glass wafers either directly or via intermediate layers, were numerically investigated as potential materials for surface acoustic wave (SAW) resonators with high quality (Q)-factor required for the next generation of mobile communication systems. The propagation velocities and electromechanical coupling coefficients of shear horizontally (SH) polarized acoustic waves were estimated as functions of LT orientation and thicknesses of all layers in LT/Si, LT/SiO2/Si, LT/glass, LT/AlN/glass and structures with several pairs of SiO2/AlN layers between LT and the glass wafer. Optimal combinations of cut angle, LT and electrode thicknesses, as well as the number and thicknesses of intermediate layers, required for the construction of resonators with improved performance were observed for each analyzed structure. In the resonators employing LT/Si and LT/SiO2/Si structures with 30°YX - 48°YX LT cuts, high electromechanical coupling k2, reaching 11.6%, can be combined with high velocities up to 4000 m/s, zero TCF at the resonant frequency and Q-factors that are considerably higher than in the LSAW filters using regular LT substrates. To understand the loss mechanisms that limit resonator Q-factors in LT/glass, mechanical displacements that accompany wave propagation in multilayered structures were visualized. Investigation of the nature of acoustic modes and their transformations with number and thicknesses of the layers revealed that the low-velocity glass wafer can be used as a supporting substrate if an intermediate AlN layer or alternating pairs of low- and high-velocity layers, for example SiO2/AlN, are introduced between LT and the glass wafer.

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Solidly Mounted Longitudinally Excited Shear Wave Resonator (YBAR) Based on Lithium Niobate Thin-Film

Laterally Excited Resonators Based on Single-Crystalline LiTaO3 Thin Film for High-Frequency Applications

Double-layer Thin-film LiNbO3 Longitudinally Excited Shear Wave Resonators with Ultra-large Electromechanical Coupling Coefficient and Spurious-Free Performance

Design and Analysis of Lithium-Niobate-Based Laterally Excited Bulk Acoustic Wave Resonator with Pentagon Spiral Electrodes.

BAW Resonator with an Optimized SiO<sub>2</sub>/Ta<sub>2</sub>O<sub>5</sub> Reflector for 5G Applications

High-performance SH-SAW resonator using optimized 30 degrees YX-LiNbO3/SiO2/Si

High-performance SH-SAW resonator using optimized 30° YX-LiNbO 3 /SiO 2 /Si

Double Busbar Structure for Transverse Energy Leakage and Resonance Suppression in Surface Acoustic Wave Resonators Using 42°YX-Lithium Tantalate Thin Plate

Combination of Tetragonal Crystals With LiTaO3 Thin Plate for Transverse Resonance Suppression of Surface Acoustic Wave Devices

Design and Fabrication of Lithium Niobate Asymmetrical Mode Resonators toward C-band and Ku-band

Suppression of spurious modes in lateral-excited bulk acoustic wave resonators using piston mode electrodes

Lithium niobate single crystal thin film resonator with benzocyclobutene as a reflective layer

Multilayered structures using thin plates of LiTaO3 for acoustic wave resonators with high quality factor

High Electromechanical Coupling Factor Lamb Wave Resonator

Simulation Analysis of SMR with Tetrahedral Amorphous Carbon As High Impedance Material of Bragg Reflection

A near spurious-free 6 GHz LLSAW resonator with large electromechanical coupling on X-cut LiNbO3/SiC bilayer substrate

A laterally excited bulk acoustic resonator with scattering vias in electrodes

Study of High-Q Laterally Excited Bulk Wave Resonator with Smaller Gap-width Reflectors

High performance SAW resonator with spurious mode suppression using double-layer electrode transverse modulation

Mo/Ti multilayer Bragg reflector for LiNbO<sub>3</sub> film bulk acoustic wave resonators