Abstract:With the arrival of the Fifth Generation (5G) communication era, there has been an urgent demand for acoustic filters with a high frequency and ultrawide bandwidth used in radio-frequency (RF) front-ends filtering and signal processing. First-order antisymmetric (A1) lamb mode resonators based on LiNbO3 film have attracted wide attention due to their scalable, high operating frequency and large electromechanical coupling coefficients (K2), making them promising candidates for sub-6 GHz wideband filters. However, A1 mode resonators suffer from the occurrence of transverse modes, which should be addressed to make these devices suitable for applications. In this work, theoretical analysis is performed by finite element method (FEM), and the admittance characteristics of an A1 mode resonator and displacement of transverse modes near the resonant frequency (fr) are investigated. We propose a novel Dielectric-Embedded Piston Mode (DEPM) structure, achieved by partially etching a piezoelectric film filled with SiO2, which can almost suppress the transverse modes between the resonant frequency (fr) and anti-resonant frequency (fa) when applied on ZY-cut LiNbO3-based A1 mode resonators. This indicates that compared with Broadband Piston Mode (BPM), Filled-broadband Piston Mode (FPM) and standard structures, the DEPM structure is superior. Furthermore, the design parameters of the resonator are optimized by adjusting the width, depth and filled materials in the etched window of the DEPM structure to obtain a better suppression of transverse modes. The optimized A1 mode resonator using a DEPM structure exhibits a transverse-free response with a high fr of 3.22 GHz and a large K2 of ~30%, which promotes the application of A1 mode devices for use in 5G RF front-ends.

Suppression of spurious modes in lateral-excited bulk acoustic wave resonators using piston mode electrodes

A laterally excited bulk acoustic resonator with scattering vias in electrodes

Spurious Modes in Laterally Excited Bulk Acoustic Resonators (XBARs): Analysis and Suppression

Design and Fabrication of Lithium Niobate Asymmetrical Mode Resonators toward C-band and Ku-band

Design and Analysis of Lithium-Niobate-Based Laterally Excited Bulk Acoustic Wave Resonator with Pentagon Spiral Electrodes.

Laterally Excited Resonators Based on Single-Crystalline LiTaO3 Thin Film for High-Frequency Applications

High performance SAW resonator with spurious mode suppression using double-layer electrode transverse modulation

A near spurious-free 6 GHz LLSAW resonator with large electromechanical coupling on X-cut LiNbO3/SiC bilayer substrate

Solidly Mounted Longitudinally Excited Shear Wave Resonator (YBAR) Based on Lithium Niobate Thin-Film

High Electromechanical Coupling Coefficient of Longitudinally Excited Shear Wave Resonator Based on Optimized Bragg Structure

Investigation on spurious mode suppression in 3.8-GHz SH-mode SAW resonators based on LiNbO 3 /SiO 2 /Si multilayer structure

Laterally-excited bulk acoustic wave resonator with an adjustable piezoelectric coupling coefficient

Suppression of Spurious Lateral Modes and Undesired Coupling Modes in Frame-Like FBARs by 2-D Theory

Design and Implementation of low phase noise oscillator based on film bulk acoustic resonator

A novel oscillator based on film bulk acoustic resonator

Inherent Suppression of Transverse Modes on LiTaO3/AT-Quartz SAW Devices

Study on the Spurious Modes in FBAR Resonators with Quasi-Free Edges

LITHIUM NIOBATE THIN FILM BASED A1 MODE RESONATORS WITH FREQUENCY UP TO 16 GHZ AND ELECTROMECHANICAL COUPLING FACTOR NEAR 35%

Use of periodic trenches in SMR-type XBAR for suppression of transverse mode resonances and lateral leakage

Partially Etched Piezoelectric Film Filled with SiO2 Structure Applied to A1 Mode Resonators for Transverse Modes Suppression

Study of High-Q Laterally Excited Bulk Wave Resonator with Smaller Gap-width Reflectors