Abstract:With the arrival of the Fifth Generation (5G) communication era, there has been an urgent demand for acoustic filters with a high frequency and ultrawide bandwidth used in radio-frequency (RF) front-ends filtering and signal processing. First-order antisymmetric (A1) lamb mode resonators based on LiNbO3 film have attracted wide attention due to their scalable, high operating frequency and large electromechanical coupling coefficients (K2), making them promising candidates for sub-6 GHz wideband filters. However, A1 mode resonators suffer from the occurrence of transverse modes, which should be addressed to make these devices suitable for applications. In this work, theoretical analysis is performed by finite element method (FEM), and the admittance characteristics of an A1 mode resonator and displacement of transverse modes near the resonant frequency (fr) are investigated. We propose a novel Dielectric-Embedded Piston Mode (DEPM) structure, achieved by partially etching a piezoelectric film filled with SiO2, which can almost suppress the transverse modes between the resonant frequency (fr) and anti-resonant frequency (fa) when applied on ZY-cut LiNbO3-based A1 mode resonators. This indicates that compared with Broadband Piston Mode (BPM), Filled-broadband Piston Mode (FPM) and standard structures, the DEPM structure is superior. Furthermore, the design parameters of the resonator are optimized by adjusting the width, depth and filled materials in the etched window of the DEPM structure to obtain a better suppression of transverse modes. The optimized A1 mode resonator using a DEPM structure exhibits a transverse-free response with a high fr of 3.22 GHz and a large K2 of ~30%, which promotes the application of A1 mode devices for use in 5G RF front-ends.

LITHIUM NIOBATE THIN FILM BASED A1 MODE RESONATORS WITH FREQUENCY UP TO 16 GHZ AND ELECTROMECHANICAL COUPLING FACTOR NEAR 35%

High Figure-of-Merit A1-Mode Lamb Wave Resonators Operating Around 6 GHz Based on the LiNbO3 Thin Film

Double-layer Thin-film LiNbO3 Longitudinally Excited Shear Wave Resonators with Ultra-large Electromechanical Coupling Coefficient and Spurious-Free Performance

Partially Etched Piezoelectric Film Filled with SiO2 Structure Applied to A1 Mode Resonators for Transverse Modes Suppression

6 GHz Lithium Niobate MEMS Resonator with Square Spiral Electrodes

Large Coupling and Spurious-Free SH 0 Plate Acoustic Wave Resonators Using LiNbO 3 Thin Film

2 to 16 GHz Fundamental Symmetric Mode Acoustic Resonators in Piezoelectric Thin-Film Lithium Niobate

A near spurious-free 6 GHz LLSAW resonator with large electromechanical coupling on X-cut LiNbO3/SiC bilayer substrate

Toward Ka Band Acoustics: Lithium Niobate Asymmetrical Mode Piezoelectric MEMS Resonators

Ring-shaped Lamb Wave Resonator Based LiNbO3 Film with A1/A3 Mode Resonance above 6/17 GHz

38.7 GHz Thin Film Lithium Niobate Acoustic Filter

High Electromechanical Coupling Factor Lamb Wave Resonator

Thin-Film Lithium Niobate Acoustic Resonator with High Q of 237 and k2 of 5.1% at 50.74 GHz

6 GHz lamb wave acoustic filters based on A1-mode lithium niobate thin film resonators with checker-shaped electrodes

Scaling Surface Acoustic Wave Filters on LNOI Platform for 5G Communication

High speed surface acoustic wave and laterally excited bulk wave resonator based on single-crystal non-polar AlN film

2-16 GHz Multifrequency X-Cut Lithium Niobate NEMS Resonators on a Single Chip

Lithium Niobate MEMS Antisymmetric Lamb Wave Resonators with Support Structures

Monolithic Integrated Multiband Acoustic Devices on Heterogeneous Substrate for Sub-6 GHz RF-FEMs

Ultra flexible pseudo-lamb wave RF resonators based on ZnO/PI and AlN/PI structures

High-quality-factor Optical Microresonators Fabricated on Lithium Niobate Thin Film with an Electro-Optical Tuning Range Spanning over One Free Spectral Range [Invited]