Study of High-Q Laterally Excited Bulk Wave Resonator with Smaller Gap-width Reflectors

Xiyu Gu,Yan Liu,Ying Xie,Zhiwei Wen,Yuanhang Qu,Wenjuan Liu,Yao Cai,Shishang Guo,Chengliang Sun

DOI: https://doi.org/10.1109/led.2023.3285813

IF: 4.8157

2023-01-01

IEEE Electron Device Letters

Abstract:How to improve the quality factor (Q) of transversely excited bulk wave resonators (XBARs) has become a key technical problem in the RF field. In this study, a XBAR with 2 μm gap-width reflector based on LiNbO3 was fabricated to attain Qp value of 1211, exceeding the measurement in typical XABR (Qp = 372). Simulation results indicate that the capacity of reflector gap width to inhibit the propagation of longitudinal wave energy increases first and then decreases as gap width increases from 0.5 μm to 8 μm The measurement results obtained from XBAR with 2 μm gap-width reflectors and XBAR with 4 μm gap-width reflectors (Qp = 802) demonstrate excellent consistency with the simulation results. This study presents the XBAR with largest Qp × K2eff (237.4) currently, which highlights the significant potential of utilizing smaller gap-width reflectors in XBARs to construct filters with large bandwidth and high frequency.

engineering, electrical & electronic