Abstract:Multilayered substrates, including thin plates of LiTaO3 (LT) bonded to silicon (Si) or glass wafers either directly or via intermediate layers, were numerically investigated as potential materials for surface acoustic wave (SAW) resonators with high quality (Q)-factor required for the next generation of mobile communication systems. The propagation velocities and electromechanical coupling coefficients of shear horizontally (SH) polarized acoustic waves were estimated as functions of LT orientation and thicknesses of all layers in LT/Si, LT/SiO2/Si, LT/glass, LT/AlN/glass and structures with several pairs of SiO2/AlN layers between LT and the glass wafer. Optimal combinations of cut angle, LT and electrode thicknesses, as well as the number and thicknesses of intermediate layers, required for the construction of resonators with improved performance were observed for each analyzed structure. In the resonators employing LT/Si and LT/SiO2/Si structures with 30°YX - 48°YX LT cuts, high electromechanical coupling k2, reaching 11.6%, can be combined with high velocities up to 4000 m/s, zero TCF at the resonant frequency and Q-factors that are considerably higher than in the LSAW filters using regular LT substrates. To understand the loss mechanisms that limit resonator Q-factors in LT/glass, mechanical displacements that accompany wave propagation in multilayered structures were visualized. Investigation of the nature of acoustic modes and their transformations with number and thicknesses of the layers revealed that the low-velocity glass wafer can be used as a supporting substrate if an intermediate AlN layer or alternating pairs of low- and high-velocity layers, for example SiO2/AlN, are introduced between LT and the glass wafer.

Combination of Tetragonal Crystals With LiTaO3 Thin Plate for Transverse Resonance Suppression of Surface Acoustic Wave Devices

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Double Busbar Structure for Transverse Energy Leakage and Resonance Suppression in Surface Acoustic Wave Resonators Using 42°YX-Lithium Tantalate Thin Plate

Inherent Suppression of Transverse Modes on LiTaO3/AT-Quartz SAW Devices

Optimization of Surface Acoustic Wave Resonators on 42°Y-X LiTaO3/SiO2/Poly-Si/Si Substrate for Improved Performance and Transverse Mode Suppression

Temperature Stable Amorphous-Teo2/36 Degrees-46 Degrees Y-X Litao3 Substrates For Surface Acoustic Wave Applications

Amorphous TeO2/36°Y-X LiTaO3 Substrates for SAW Application

Temperature stable amorphous-TeO2∕36°–46° Y-X LiTaO3 substrates for surface acoustic wave applications

Multilayered structures using thin plates of LiTaO3 for acoustic wave resonators with high quality factor

A Novel Temperature Stable Composite Substrates for Surface Acoustic Wave Applications

A 5.5 GHz S3 Mode Plate Acoustic Wave Resonator Using Lithium Tantalate Thin Film

Slow Surface Acoustic Waves via Lattice Optimization of a Phononic Crystal on a Chip

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High Electromechanical Coupling Coefficient of Longitudinally Excited Shear Wave Resonator Based on Optimized Bragg Structure

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High Frequency, Low Loss and Low TCF Acoustic Devices on LiTaO3-on-SiC Substrate

High performance SAW resonator with spurious mode suppression using double-layer electrode transverse modulation

Surface Acoustic Wave Devices Based on High Quality Temperature-Compensated Substrates

Suppression of spurious responses near anti-resonance of TC-SAW resonators by selective thinning of SiO2

Spurious-Free Shear-horizontal SAW Resonators Using LiTaO3/SiO2/Si Substrate

Exploring Low-Loss Surface Acoustic Wave Devices on Heterogeneous Substrates