Reinforcement Learning Based Precise Positioning Method for a Millimeters-Sized Omnidirectional Mobile Microrobot

Jianghao Li,Zhenbo Li,Jiapin Chen

DOI: https://doi.org/10.1007/978-3-540-88513-9_101

2008-10-15

Abstract:

What problem does this paper attempt to address?

Optimization of Surface Acoustic Wave Resonators on 42°Y-X LiTaO3/SiO2/Poly-Si/Si Substrate for Improved Performance and Transverse Mode Suppression

Hongzhi Pan,Yang Yang,Lingqi Li,Qiaozhen Zhang,Zeyu Zheng,Xuesong Du,Pingjing Chen,Jiahe Dong,Chuan Lu,Xiao Xie,Hualin Li,Qiang Xiao,Jinyi Ma,Zhenglin Chen

DOI: https://doi.org/10.3390/mi15010012

2023-12-21

Abstract:SAW devices with a multi-layered piezoelectric substrate have excellent performance due to advantages such as a high quality factor, Q, low loss insertion, large bandwidth, etc. Prior to manufacturing, a comprehensive analysis and proper design are essential to evaluating the device's key performance indicators, including the Bode Q value, bandwidth, and transverse mode suppression. This study explored the performance of SAW resonators employing a 42°Y-X LiTaO3 (LT) thin-plate-based multi-layered piezoelectric substrate. The thicknesses for each layer of the 42°Y-X LT/SiO2/poly-Si/Si substrate were optimized according to the index of phase velocity, Bode Q value, and bandwidth. The effect of the device structure parameters on the dispersion curve and slowness curve was studied, and a flat slowness curve was found to be favorable for transverse mode suppression. In addition, the design of the dummy configuration was also optimized for the suppression of spurious waves. Based on the optimized design, a one-port resonator on the 42°Y-X LT/SiO2/poly-Si/Si substrate was fabricated. The simulation results and measurements are presented and compared, which provides guidelines for the design of new types of SAW devices configured with complex structures.
High speed surface acoustic wave and laterally excited bulk wave resonator based on single-crystal non-polar AlN film

Tongxin Lu,Xiaoli Fang,Shibin Zhang,Ye Yuan,Yanda Ji,Hongmeng Zhang,Anli Yang,Hengyi Yin,Pengcheng Zheng,Liping Zhang,Jinbo Wu,Tai Li,Wei Luo,Tiangui You,Xin Ou,Xinqiang Wang

DOI: https://doi.org/10.1063/5.0181087

IF: 4

2023-12-18

Applied Physics Letters

Abstract:One approach to extend the acoustic applications of aluminum nitride (AlN) in the GHz frequency range is to take advantage of the piezoelectric performance and high acoustic velocity (∼11 350 m/s) along the c-axis of this material. In particular, in the case of high-frequency micro-electromechanical systems, it should be possible to simplify the construction of resonators by using a-plane AlN-based structures. In the work described in this Letter, a single-crystalline a-plane AlN layer on an r-plane sapphire substrate is obtained by combining sputtering and high-temperature annealing. Based on this non-polar AlN, a resonator with only planar interdigital transducer electrodes is fabricated. Experiments on this resonator reveal simultaneous excitation of an anisotropic Rayleigh surface acoustic wave (SAW) at 2.38 GHz and a laterally excited bulk acoustic wave (LBAW) at 4.00 GHz. It is found that the Rayleigh SAW exhibits outstanding performance, with a quality factor as high as 2458 and great stability under variations in temperature. The LBAW at 4.00 GHz is excited by pure planar interdigitated electrodes without the need for any cavity or bottom electrode structure, thus demonstrating a promising approach to the construction of high-frequency resonators with a relatively simple structure.

physics, applied
Layered LiNbO $_{3}$ /At-Quartz Wideband Devices with Inherent Transverse Mode Suppression

Peisen Liu,Boyuan Xiao,Sulei Fu,Huiping Xu,Qiufeng Xu,Xinchen Zhou,Rui Wang,Cheng Song,Fei Zeng,Weibiao Wang,Feng Pan

DOI: https://doi.org/10.1109/lmwt.2024.3496911

2024-01-01

Abstract:This letter reports on a novel layered structure with inherent spurious transverse suppression for shear-horizontal surface acoustic wave (SH-SAW) wideband devices. The platform integrates a giant electromechanical coupling factor ( $k_{\text{eff}}^{{2}}$ ) lithium niobate (LN) thin film with a commercially available AT-quartz substrate characterized by strong concave shear horizontal slowness, inherently suppressing transverse modes through slowness curve manipulation. We compared the proposed LN/AT-quartz platform with prevalent LN/SiO $_{2}$ /Si structure through 3-D finite-element analyses and device measurements, theoretically and experimentally verifying the superior capability of AT-quartz for transverse mode suppression. Besides large $k_{\text{eff}}^{{2}}$ over 20%, maximum quality factor ( $Q_{\text{max}}$ ) exceeding 800, and spurious-free responses up to 6 GHz achieved in fabricated LN/AT-quartz resonators, transverse modes were inherently mitigated in LN thin-film layered surface acoustic wave (SAW) devices for the first time. The fabricated synchronous gigahertz filter shows a 3-dB fractional bandwidth (FBW) of 10.5%, a minimum insertion loss (IL $_{\text{min}}$ ) of 0.36 dB, and flat passband with transverse modes well inherently suppressed utilizing standard interdigital transducer (IDT) layout.
Single-Crystalline LiTaO 3 Film-Based High-Frequency Surface Acoustic Wave Resonators and Electronics Applications

Xingli He,Jian Zhou,Weipeng Xuan,Zhengjia Zhan,Yunjing Zhang,Peng Li,Linghui Kong

DOI: https://doi.org/10.1109/lmwc.2021.3128785

IF: 3

2022-04-01

IEEE Microwave and Wireless Components Letters

Abstract:Ultrahigh-frequency surface acoustic wave (SAW) devices with high quality ($Q$ ) factors are essential components for the next-generation wireless communication system. In this work, we reported high-performance and ultrahigh-frequency SAW devices with single-crystalline LiTaO3/SiO2/Si [LT-on-insulator (LTOI)] multilayered heterostructure. The fabricated SAW resonators exhibited multi-resonant modes (Rayleigh, Sezawa, and LLSAW mode) with the frequency ranging from 1.81 to 8.33 GHz. Especially, the SAW resonator with the Rayleigh wave frequency over 5.0 GHz and high $Q$ value around 2300 with a wavelength of 600 nm was realized. The variation of the phase velocity, the $Q$ factor for each resonant mode, and the effective coupling coefficients ($k^{2}_{\mathrm {eff}}$ ) versus the normalized LiTaO3 film thickness were systematically investigated. The proposed high-frequency SAW based on LTOI multilayered heterostructure possesses the low temperature coefficient of frequency (TCF, −20 ppm/K). Furthermore, a high-performance SAW bandpass filter with the center frequency of ~3.5 GHz was achieved. The work shows the great potential of the LiTaO3 single-crystalline thin-films-based SAW for ultrahigh frequency electronics applications.

engineering, electrical & electronic
High-Performance Acoustic Wave Devices on LiTaO$_{3}$/SiC Hetero-Substrates

Liping Zhang,Shibin Zhang,Jinbo Wu,Pengcheng Zheng,Hongyan Zhou,Hulin Yao,Zhongxu Li,Kai Huang,Huarui Sun,Xin Ou

DOI: https://doi.org/10.1109/tmtt.2023.3267556

IF: 4.3

2023-01-01

IEEE Transactions on Microwave Theory and Techniques

Abstract:We present high-performance shear horizontal surface acoustic wave (SH-SAW) and longitudinal leaky SAW (LL-SAW) devices using lithium tantalate (LiTaO $_{3})$ thin films on silicon carbide (SiC) substrate. The 4-in LiTaO $_{3}$ -on-SiC (LTOSiC) hetero-substrate was prepared by an ion-slicing process. Instead of the Si-based piezo-on-insulator substrates, generally embedded with functional dielectric layers (e.g., SiO $_{2})$ , LTOSiC with a simple structure has achieved exciting results on device frequency, quality factor ( $Q)$ , temperature coefficient of frequency (TCF), and thermal transport properties. The demonstrated resonators show the scalable resonances of 1.19–4.91 GHz, in which the gigahertz SH-SAW resonator exhibits an ultrahigh Bode- $Q$ of 8100 and an excellent TCF of $-$ 4.3 ppm/K, while the LL-SAW resonator presents a high Bode- $Q$ of 1000 and an improved TCF of $-$ 25.4 ppm/K at 5.0 GHz. Besides, the demonstrated filters show the center frequencies ( $f_c)$ of 2.74–4.26 GHz, the insertion loss (IL) below 1.26 dB, and an out-of-band (OoB) rejection of 10–45 dB. The SH-SAW-based filter shows a $f_c$ of 3.36 GHz, an IL of 0.78 dB, and a 3-dB bandwidth of 180 MHz, while the LL-SAW-based filter shows a $f_c$ of 3.85 GHz and an IL of 0.85 dB. Overall, LTOSiC may serve as an advanced material platform of acoustic devices for 5G-frequency range 1 (5G-FR1) bands.

engineering, electrical & electronic
Combination of Tetragonal Crystals With LiTaO3 Thin Plate for Transverse Resonance Suppression of Surface Acoustic Wave Devices

Yiwen He,Ting Wu,Yu-Po Wong,Temesgen Bailie Workie,Jingfu Bao,Ken-Ya Hashimoto

DOI: https://doi.org/10.1109/TUFFC.2022.3221470

Abstract:This article discusses combination of tetragonal crystals with LiTaO3 (LT) thin plate for complete transverse resonance suppression of surface acoustic wave (SAW) devices without k2 deterioration by manipulating the slowness shape. Besides, better lateral energy confinement is achieved as well by the use of a double bus-bar structure. First, the mechanism of slowness shape manipulation by combining tetragonal crystals is studied. By comparison, YZ-lithium tetraborate (LBO) shows better performance than 69°Y90°X quartz. Then, numerical simulations are carried out using a periodic 3-D finite method assisted by a hierarchical cascading technique (HCT), and the effectiveness of transverse mode suppression by flattening the slowness shape is revealed. Also, the possibility to realize temperature compensation (TC) is discussed owing to the unique material property of LBO. Moreover, the capability of other tetragonal crystals for slowness manipulation is compared, and LBO is the best choice among these tetragonal crystals.
Double-layer Thin-film LiNbO3 Longitudinally Excited Shear Wave Resonators with Ultra-large Electromechanical Coupling Coefficient and Spurious-Free Performance

Zhen-Hui Qin,Shu-Mao Wu,Chen-Bei Hao,Hua-Yang Chen,Sheng-Nan Liang,Si-Yuan Yu,Yan-Feng Chen

2024-05-27

Abstract:This work proposes a double-layer thin-film lithium niobate (LiNbO3) longitudinally excited shear wave resonator with a theoretical electromechanical coupling coefficient exceeding 60%, RaR close to 28%, and no spurious modes. This ultra-large electromechanical coupling coefficient, which is close to the upper limit of LiNbO3, is much larger than all microwave acoustic resonators reported so far. Based on X-cut thin-film LiNbO3, when the film thickness is in the order of hundreds of nanometers, the frequency of the fundamental mode of the resonator can cover 1GHz to10GHz. The resonator design is convenient and flexible. The resonant frequency can be modulated monotonically by changing either the electrode or the thickness of the thin-film LiNbO3 without introducing additional spurious modes. This ideal resonator architecture is also applicable to LiTaO3. With the development of the new generation of mobile communications, this resonator is expected to become a key solution for future high-performance, ultra-wide-bandwidth acoustic filters.

Applied Physics
High-performance SH-SAW resonator using optimized 30° YX-LiNbO 3 /SiO 2 /Si

Shuxian Wu,Zonglin Wu,Hangyu Qian,Feihong Bao,Gongbin Tang,Feng Xu,Jie Zou

DOI: https://doi.org/10.1063/5.0091352

IF: 4

2022-06-13

Applied Physics Letters

Abstract:With the rapid development of 5G technology, acoustic wave filters with large bandwidths are urgently required to deal with the explosive increase in data traffic. Recently, there is extensive attention paid to shear-horizontal (SH) surface acoustic wave (SAW) resonators based on lithium niobate (LiNbO 3 ) substrates, thanks to its large effective coupling coefficient ( k 2 eff ). However, because of the bulk acoustic wave (BAW) energy radiation into the LiNbO 3 substrate, it is very challenging to obtain a high quality factor ( Q) for SH-SAW resonators. In this study, a 30° YX-LiNbO 3 /SiO 2 /Si SAW resonator with the SH mode is proposed to achieve a large coupling and a high Q simultaneously. By bonding a LiNbO 3 thin film onto a thermally oxidized Si(100) substrate, the velocity mismatch between the piezoelectric layer and the SiO 2 /Si substrate could significantly reduce the BAW energy leakage. Finite element method simulation is employed to optimize the cut angle of the LiNbO 3 film and the thickness of each layer. The fabricated SH-SAW resonators with a resonant frequency of 924 MHz yield a k 2 eff of 24.8% and a maximum of Bode- Q (Bode- Q max ) of 1107. In comparison with the previously reported same-type SAW resonators, a higher Bode- Q max is demonstrated in this work when their k 2 eff is larger than 20%, providing a potential solution to enable wideband tunable filters in the 5G communication system.

physics, applied
High Frequency, Low Loss and Low TCF Acoustic Devices on LiTaO3-on-SiC Substrate

Liping Zhang,Shibin Zhang,Hongyan Zhou,Jinbo Wu,Pengcheng Zheng,Hongtao Xu,Zhenghua An,Tiangui You,Xin Ou

DOI: https://doi.org/10.1109/ius52206.2021.9593841

2021-01-01

Abstract:In this work, a novel heterogeneous substrate of lithium tantalate thin film on silicon carbide (LiTaO3-on-SiC, LTOSiC) was proposed and prepared. Since the SiC features an extremely-high phase velocity, a low acoustic loss and a small thermal expansion coefficient (CTE), surface acoustic wave devices with high frequency, low loss and low TCF were achieved on the LTOSiC substrate. The fabricated shear horizontal surface acoustic wave (SH-SAW) resonator shows a maximum Bode-Q (Bode-Qmax) of 2235 and a low TCF of -9.4 ppm/K at 1.90 GHz, while the longitudinal leaky surface acoustic wave (LLSAW) resonator shows a high Bode-Qmax of 1180 and an improved TCF of -24.7 ppm/K at 4.40 GHz. The ladder-type filter composed of SH-SAW resonators was also demonstrated, showing a center frequency (fc) of 3.03 GHz, an insertion loss (IL) of 0.9 dB and a 3-dB bandwidth of 101 MHz. The TCFs at - 3 dB attenuation of the lower and higher frequency side of passband are -13.8 and -15.8 ppm/K, respectively. The acoustic devices on LTOSiC substrate possess the prospect of commercial applications in 5G era.
Large Coupling and Spurious-Free SH 0 Plate Acoustic Wave Resonators Using LiNbO 3 Thin Film

Shuxian Wu,Zonglin Wu,Hangyu Qian,Feihong Bao,Gongbin Tang,Feng Xu,Jie Zou

DOI: https://doi.org/10.1109/ted.2023.3297561

IF: 3.1

2023-08-25

IEEE Transactions on Electron Devices

Abstract:With the rapid development of 5G communication technology, high-performance acoustic filters are urgently required to cope with the increasing number of frequency bands. Recently, an extensive attention has been paid to the advancement of lithium niobate (LiNbO3)-based thin-film acoustic resonators due to their large electromechanical coupling factor. In this article, a fundamental (0th) shear-horizontal plate acoustic wave (SH0-PAW) resonator based on a 30 -cut LiNbO3/SiO2 thin film is proposed. Using the finite element method (FEM), the effective electromechanical coupling coefficient ( ) and phase velocity as the function of the rotation angle of the LiNbO3 film and the layer thicknesses are extracted. Meanwhile, the dispersion characteristic of the SH0 mode is analyzed. The fabricated resonators yield a of 24.8%, a Bode- of 688, and a figure of merit (FoM = ) of 170. Furthermore, a tilted interdigital-transducer (IDT) method is adopted to suppress the spurious modes of the proposed resonators. It has been experimentally verified that most of the transverse modes are suppressed, and the longitudinal modes are suppressed effectively. The proposed resonator provides an effective solution to design a wideband, low loss, and unrippled acoustic filter for communication systems.

engineering, electrical & electronic,physics, applied
High-performance SH-SAW resonator using optimized 30 degrees YX-LiNbO3/SiO2/Si

Shuxian Wu,Zonglin Wu,Hangyu Qian,Feihong Bao,Gongbin Tang,Feng Xu,Jie Zou

DOI: https://doi.org/10.1063/5.0091352

IF: 4

2022-01-01

Applied Physics Letters

Abstract:With the rapid development of 5G technology, acoustic wave filters with large bandwidths are urgently required to deal with the explosive increase in data traffic. Recently, there is extensive attention paid to shear-horizontal (SH) surface acoustic wave (SAW) resonators based on lithium niobate (LiNbO3) substrates, thanks to its large effective coupling coefficient (k(eff)(2)). However, because of the bulk acoustic wave (BAW) energy radiation into the LiNbO3 substrate, it is very challenging to obtain a high quality factor (Q) for SH-SAW resonators. In this study, a 30 degrees YX-LiNbO3/SiO2/Si SAW resonator with the SH mode is proposed to achieve a large coupling and a high Q simultaneously. By bonding a LiNbO3 thin film onto a thermally oxidized Si(100) substrate, the velocity mismatch between the piezoelectric layer and the SiO2/Si substrate could significantly reduce the BAW energy leakage. Finite element method simulation is employed to optimize the cut angle of the LiNbO3 film and the thickness of each layer. The fabricated SH-SAW resonators with a resonant frequency of 924 MHz yield a k(eff)(2) of 24.8% and a maximum of Bode-Q (Bode-Q(max)) of 1107. In comparison with the previously reported same-type SAW resonators, a higher Bode-Q(max) is demonstrated in this work when their k(eff)(2) is larger than 20%, providing a potential solution to enable wideband tunable filters in the 5G communication system. Published under an exclusive license by AIP Publishing.
Investigation on the temperature coefficient of frequency performance of LiNbO3 on quartz and glass surface acoustic wave resonators

Yong Guo,Michio Kadota,Shuji Tanaka

DOI: https://doi.org/10.35848/1347-4065/acb954

IF: 1.5

2023-03-04

Japanese Journal of Applied Physics

Abstract:High impedance ratio (Z-ratio), low temperature coefficient of frequency (TCF) and spurious free characteristic are three main requirements for surface acoustic wave (SAW) resonators. The reported LiTaO3/Quartz (Qz) hetero acoustic layer (HAL) resonator can satisfy them, but the bandwidth is too narrow. LiNbO3 (LN) is suitable for wideband resonators, but the TCF is too large due to its high coupling factor. In this work, we study wideband HAL SAW resonators combining LN and three kinds of substrates with positive TCF and small coefficient of thermal expansion, including Qz, ABC-G and ZERO glasses. By simulation, the Euler angles of (0°, 101°, 0°) for LN, (0°, 160°, 90°) for Qz, and the 0.1–0.2λ (λ is the wavelength) LN thickness are used. Results show LN/Qz, LN/ABC-G and LN/ZERO exhibit Z-ratio of 82.7 dB, 76.2 dB and 76.2 dB, respectively. LN/ABC-G shows the lowest TCF of −61 ppm C−1 at resonance frequency and −62 ppm C−1 at anti-resonance frequency.

physics, applied
High-Performance Surface Acoustic Wave Devices Using LiNbO 3 /SiO 2 /SiC Multilayered Substrates

Junyao Shen,Sulei Fu,Rongxuan Su,Huiping Xu,Zengtian Lu,Zhibin Xu,Jingting Luo,Fei Zeng,Cheng Song,Weibiao Wang,Feng Pan

DOI: https://doi.org/10.1109/tmtt.2021.3077261

IF: 4.3

2021-08-01

IEEE Transactions on Microwave Theory and Techniques

Abstract:The rapid development of the fifth-generation (5G) wireless system is driving strong demand for high-performance radio frequency filters. This work studies shear horizontal surface acoustic wave (SAW) devices using 15°-rotated $Y$ -cut $X$ -propagating (15°Y-X) LiNbO3/SiO2/SiC multilayered substrates. Single-crystalline 15°Y-X LiNbO3 films are bonded to SiO2/SiC handling substrates by the smart cut technology. On the basis of accurate finite-element-method simulations, LiNbO3/SiO2/SiC wafer configurations are optimized to suppress spurious resonance due to Rayleigh-mode and transverse-mode responses, and one-port resonators with a clean spectrum, a high electromechanical coupling coefficient of 22.00%, and an admittance ratio (impedance ratio) over 65 dB are successfully implemented. Based on the characteristics of the resonators, high-performance filters with a center frequency of 1.28 GHz, a large 3-dB fractional bandwidth of 16.65%, and a low minimum insertion loss of 1.02 dB are successfully designed and fabricated. Furthermore, no ripples in the passband of the filters are observed. Additionally, the filters exhibit a temperature coefficient of center frequency of −63.8 ppm/°C and a large power durability of 33.2 dBm. This work confirms the high performances of the SAW devices using the 15°Y-X LiNbO3/SiO2/SiC multilayered substrate, and this type of SAW device exhibits a prospect of commercial applications in the 5G wireless system.

engineering, electrical & electronic
Influence of a Piezoelectric ZnO Intermediate Layer on Rayleigh Waves Propagating in Sc 43% AlN 57% /zno/diamond Hetero-Structures Subjected to Uniaxial Stress

Othmani Cherif,Labiadh Lazhar,Lü Chaofeng,University of Cambridge,National School of Engineers of Sfax (ENIS)

DOI: https://doi.org/10.1140/epjp/s13360-020-00912-9

2020-01-01

Abstract:Surface acoustic waves (SAWs) are of practical importance across several fields. Particularly, a wide range of SAW devices is available, which are based on the stacking piezoelectric layered hetero-structures. As such, efficient and stable algorithm of analyzing electromechanical coupling factor (K2) should be of specific interest, inspiring a variety of piezoelectric layered structures. Motivated by the above considerations, this paper exploits the performance of Sc43% AlN57%/ZnO/diamond piezoelectric hetero-structures using matrix and polynomial methods. Consequently, dispersion curves, the electromechanical coupling factor and profiles of Rayleigh waves are calculated, in which the properties of hexagonal intermediate ZnO layer are varied. Here, $$ (0001) - [10\bar{1}0]{\text{ZnO}} $$ or $$ (11\bar{2}0) - [0001]{\text{ZnO}} $$ directions of the middle layer were integrated with Sc43% AlN57%/diamond to be a composite hetero-structure with a larger K2 of SAW. Accordingly, a commercial ZnO specimen was characterized by scanning electron microscopy (SEM) as well as Raman and XRD spectroscopy to determine its available crystallographic directions and the C-axis hexagonal character. Comparing with conventional AlN/diamond hetero-structures, the inclusion of ZnO as the intermediate layer provides with an excellent electromechanical coupling factor which significantly improves the $$ (11\bar{2}0) - [0001] $$ structure. However, comparing with the ZnO/diamond hetero-structure, a high phase velocity (Vph) was observed. Therefore, the development of a well-balanced structure that maximizes the values of Vph and K2 is systematically challenging. Moreover, it was found that initial stresses have a significant effect on the Rayleigh wave velocities. Fundamental A0 Lamb mode can be generated in piezoelectric hetero-structures when the properties of substrate remain very low relative to the film. Numerical results obtained in this paper can provide a deeper insight into the nature of the Rayleigh wave behaviors in piezoelectric hetero-structures, involving a ZnO intermediate layer.
High Electromechanical Coupling Factor Lamb Wave Resonator

Tengbo Cao,Rui Ding,Feng Gao,Weipeng Xuan,Qing Wan,Jack Luo,Yuxuan Luo,Abdelkrim Khelif,Amine Bermak,Shurong Dong

DOI: https://doi.org/10.1063/5.0233784

IF: 2.877

2024-01-01

Journal of Applied Physics

Abstract:Lamb wave resonators (LWRs) based on lithium niobate on insulator (LNOI) substrates operating in an A1 mode at frequencies above 5 GHz typically exhibit high electromechanical coupling coefficients (K2) ranging from 20% to 30%. This makes them promising candidates to replace current bulk acoustic wave technology in next-generation broadband RF filters. However, the K2 of conventional LWRs still struggles to meet application requirements for bandwidths exceeding 1 GHz, such as WiFi-6E. This paper presents an analytical optimization approach for rapid and comprehensive scanning of the full 3D Euler space to find the maximum effective K2 of LWR devices. Such a full scan is difficult to achieve by the conventional time-consuming finite element method (FEM). The K2 results for a selected subset of Euler angles obtained through this analytical approach align with FEM simulation results. The optimized results show that LWRs on LNOI can achieve the highest K2 of 59.92% at Euler angles of (0, −151°, −60°), providing bandwidths exceeding 1 GHz at 5 GHz. To validate this optimization approach, LWRs with various orientations were fabricated on both 41° YX-cut and Z-cut LNOI wafers, with measured K2 values at different Euler angles agreeing well with both analytical and FEM results. The proposed K2 optimization method serves as a valuable guideline for selecting substrate cuts and device orientations in the design of ultra-broadband filters for next-generation telecommunications.
Heterogeneous Integration of 42°YX LiNbO3/SiO2/Quartz for Wideband and Spurious-Free SAW Resonators

Xinjian Ke,Jinbo Wu,Yang Chen,Shibin Zhang,Xiaomeng Zhao,Pengcheng Zheng,Min Zhou,Kai Huang,Xin Ou

DOI: https://doi.org/10.1109/ted.2024.3450438

IF: 3.1

2024-09-28

IEEE Transactions on Electron Devices

Abstract:As a promising material, lithium niobate (LiNbO3, LN) thin films on heterogeneous substrates have received widespread attention in the field of radio frequency (RF) for broadband filters in recent years. This article proposes a wafer-scale 42°YX LN/SiO2/36°YX quartz (LNOQ) substrate for spurious-free shear horizontal surface acoustic wave (SH-SAW) resonators. Through 3-D finite element simulation, the structures of the LNOQ and interdigital electrodes are optimized to get a large electromechanical coupling coefficient ( ) and good confinement of the acoustic energy, as well as to suppress the spurious modes. The LNOQ wafer fabricated by the ion-slicing process exhibits a high film uniformity of 608.16 nm %. The full-width at half-maximum (FWHM) of the high-resolution X-ray diffraction rocking curve of the LN is only 39.6 arcsec, which has the characteristics of a single crystal. The prepared SAW resonator features a large of 31.56%, high quality factor of 1048, and a clear response over a wide frequency range. The demonstrated LNOQ platform shows great potential in broadband RF wireless communications.

engineering, electrical & electronic,physics, applied
High-Performance Surface Acoustic Wave Devices Using LiNbO3/SiO2/SiC Multilayered Substrates

Junyao Shen,Sulei Fu,Rongxuan Su,Huiping Xu,Zengtian Lu,Zhibin Xu,Jingting Luo,Fei Zeng,Cheng Song,Weibiao Wang,Feng Pan

DOI: https://doi.org/10.1109/tmtt.2021.3077261

IF: 4.3

2021-01-01

IEEE Transactions on Microwave Theory and Techniques

Abstract:The rapid development of the fifth-generation (5G) wireless system is driving strong demand for high-performance radio frequency filters. This work studies shear horizontal surface acoustic wave (SAW) devices using 15°-rotated Y-cut X-propagating (15°Y-X) LiNbO 3 /SiO 2 /SiC multilayered substrates. Single-crystalline 15°Y-X LiNbO 3 films are bonded to SiO 2 /SiC handling substrates by the smart cut technology. On the basis of accurate finite-element-method simulations, LiNbO 3 /SiO 2 /SiC wafer configurations are optimized to suppress spurious resonance due to Rayleigh-mode and transverse-mode responses, and one-port resonators with a clean spectrum, a high electromechanical coupling coefficient of 22.00%, and an admittance ratio (impedance ratio) over 65 dB are successfully implemented. Based on the characteristics of the resonators, high-performance filters with a center frequency of 1.28 GHz, a large 3-dB fractional bandwidth of 16.65%, and a low minimum insertion loss of 1.02 dB are successfully designed and fabricated. Furthermore, no ripples in the passband of the filters are observed. Additionally, the filters exhibit a temperature coefficient of center frequency of -63.8 ppm/°C and a large power durability of 33.2 dBm. This work confirms the high performances of the SAW devices using the 15°Y-X LiNbO 3 /SiO 2 /SiC multilayered substrate, and this type of SAW device exhibits a prospect of commercial applications in the 5G wireless system.
Wideband and Low-Loss Surface Acoustic Wave Filter Based on 15° YX-LiNbO₃/SiO₂/Si Structure

Rongxuan Su,Junyao Shen,Zengtian Lu,Huiping Xu,Qingshan Niu,Zhibin Xu,Fei Zeng,Cheng Song,Weibiao Wang,Sulei Fu,Feng Pan

DOI: https://doi.org/10.1109/led.2021.3051298

IF: 4.8157

2021-01-01

IEEE Electron Device Letters

Abstract:With the development of the radio frequency technique, the explosive growth of transmitted data in 5G era puts higher requirements on surface acoustic wave (SAW) filter bandwidth. In this work, 15°YX-LiNbO3(LN)/SiO2/Si multilayer structure was proposed, where both LN and SiO2 films possess uniform thickness and the interfaces between films are quite clear. With hierarchical cascading algorithm, the spurious resonance that resulted from Rayleigh mode was minimized through the modulation of Cu electrode thickness. One-port resonators measurement results confirm a high electromechanical coupling coefficient of shear horizontal mode ranging from 22.5% to 25.2%. Furthermore, a ladder-type filter with a center frequency of 1279 MHz and a large fractional bandwidth of 20.2% was successfully fabricated. Excellent bandpass filtering properties were achievable with minimum insertion loss of 0.8 dB and in-band fluctuation less than 0.9 dB. Multilayer structure SAW filters also exhibited a temperature coefficient of frequency of -57.7 ppm/°C and a power durability of 33 dBm, which are both significant improvements compared with that of devices built on bulk 15°YX-LN substrate. This work provides an effective solution for wideband and low-loss radio frequency filters in 5G communication systems, suitable for large-scale application and commercial promotion.
Structure With Thin Siox/Sinx Bilayer And Al Electrodes For High-Frequency, Large-Coupling, And Low-Cost Surface Acoustic Wave Devices

Junyao Shen,Sulei Fu,Rongxuan Su,Huiping Xu,Weibiao Wang,Zengtian Lu,Qiong Feng,Fei Zeng,Cheng Song,Feng Pan

DOI: https://doi.org/10.1016/j.ultras.2021.106460

IF: 4.2

2021-01-01

Ultrasonics

Abstract:With the development of fifth-generation wireless systems, the Internet of Things, and health services, surface acoustic wave (SAW)-based filters and sensors have attracted considerable interest. This study presents a new structure for high-frequency, large-coupling, and low-cost SAW devices that helps implement high-frequency and wideband filters and enhances the sensitivity of sensors. The structure is based on 15 degrees Y-X LiNbO3, thin SiOx/SiNx bilayer overlay, and Al electrodes. Furthermore, a low-cost fabrication process for SAW devices based on this structure was designed. Simulation and experimental results show that the bilayer substantially weakens the leaky nature of shear-horizontal-type SAWs with a phase velocity higher than that of a slow-shear bulk wave in LiNbO3. Thus, the limitation related to the velocity of 4029 m/s was overcome, and the phase velocity reached approximately 4500 m/s, which means an increase of 50% compared with that of conventional Cu/15 degrees Y-X LiNbO3 devices. Consequently, the frequency dramatically increases, and the quality of the SAW response is ensured. Simultaneously, a large electromechanical coupling factor close to 20% can be achieved, which is still suitable for wideband filters and sensors with high energy transduction coefficients. This new structure is expected to become a major candidate for SAW devices in the future.
Thin-Film Lithium Niobate Acoustic Resonator with High Q of 237 and k2 of 5.1% at 50.74 GHz

Jack Kramer,Vakhtang Chulukhadze,Kenny Huynh,Omar Barrera,Michael Liao,Sinwoo Cho,Lezli Matto,Mark S. Goorsky,Ruochen Lu

DOI: https://doi.org/10.1109/EFTF/IFCS57587.2023.10272149

2023-07-12

Abstract:This work reports a 50.74 GHz lithium niobate (LiNbO3) acoustic resonator with a high quality factor (Q) of 237 and an electromechanical coupling (k2) of 5.17% resulting in a figure of merit (FoM, Q x k2) of 12.2. The LiNbO3 resonator employs a novel bilayer periodically poled piezoelectric film (P3F) 128 Y-cut LiNbO3 on amorphous silicon (a-Si) on sapphire stack to achieve low losses and high coupling at millimeter wave (mm-wave). The device also shows a Q of 159, k2 of 65.06%, and FoM of 103.4 for the 16.99 GHz tone. This result shows promising prospects of P3F LiNbO3 towards mm-wave front-end filters.

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Thin-Film Lithium Niobate Acoustic Resonator with High Q of 237 and k2 of 5.1% at 50.74 GHz