Abstract:This article presents a tiny-size and high-performance thermal gas flow sensor with suspended Si/ Si thermopile formed in an ordinary non-silicon-on-insulator (SOI) (111) silicon wafer. A front-side bulk micromachining technique is herein employed to form the proposed gas flow sensor without double-side fabrication process, wafer bonding, and cavity-SOI needed. To achieve high sensitivity and quick response time, the suspended single-crystalline Si/ Si thermocouple which shows significantly higher Seebeck coefficient and lower noise compared to that of the traditional polysilicon/ polysilicon thermocouple is first used to construct the flow sensor. And the fishbone-shaped suspended SiN dielectric membrane is designed to maximize the thermal resistance between the Si heater and the silicon substrate, reducing heat dissipation from the Si heater to the silicon substrate. In addition, using high heat-conductivity Au-film to connect the cold junction and the bulk silicon acting as a heat-sink not only increases the temperature difference between the hot junction and the cold junction but also reduces the complexity of the fabrication process. Thanks to the single-side micromachining process, the sensor chip size is as small as mm. Finally, the characterization of the fabricated gas flow sensor was evaluated, showing an ultrahigh normalization sensitivity of 5 V/sccm/W, a quick response time of 1.44 ms, and a minimum detectable flow velocity (MDFV) of 0.0083 sccm.

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