Abstract:GaN based high electron mobility transistors show promise in numerous device applications which elicits the need for accurate models of bulk, surface, and interface electronic properties. We detail here a hybrid density functional theory study of zinc blende (zb) GaN and diamond bulk and surface properties, and zb GaN on diamond interfaces using slab supercell models. Details are provided on the dependence of electronic properties with respect to supercell size, the use of pseudo-hydrogen to passivate the bottom GaN layer, and dipole corrections. The large bulk modulus of diamond provides a templating structure for GaN to grow upon, where a large lattice mismatch is accounted for through the inclusion of a cationic Ga adlayer. Looking at both type I and II surfaces and interfaces of GaN shows the instability of zb GaN without an adlayer (type II), where increased size, pseudo-hydrogen passivation and dipole corrections do not remove the spurious interaction between the top and bottom layers in type II GaN. Layer dependent density of states, local potential differences, and charge density differences show that the type I interface (with a Ga adlayer) is stable with an adhesion energy of 0.704 eV/Å2 (4.346 J/m2); interestingly, the diamond charge density intercalates into the first layer of GaN, which was seen experimentally for wurtzite GaN grown over diamond. The type II interface is shown to be unstable which implies that, to form a stable, thin-film zb interface between GaN and diamond, the partial pressure of trimethylgallium must be controlled to ensure a Ga layer exists both on the top and bottom layer of the GaN thin film atop the diamond. We believe our results can shed light towards a better understanding of the GaN/diamond multifaceted interface present in the GaN overgrowth on diamond samples.

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Zeta potential and nanodiamond self assembly assisted diamond growth on lithium niobate and lithium tantalate single crystal

Hybrid density functional theory study on zinc blende GaN and diamond surfaces and interfaces: Effects of size, hydrogen passivation and dipole corrections

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Clean and As-Covered Zinc-Blende GaN (001) Surfaces: Novel Surface Structures and Surfactant Behavior

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Growth of GaN epitaxial films on polycrystalline diamond by metal-organic vapor phase epitaxy

Monitoring of the Initial Stages of Diamond Growth on Aluminum Nitride Using In Situ Spectroscopic Ellipsometry

Selective area growth of GaN nanowires and nanofins by molecular beam epitaxy on heteroepitaxial diamond (001) substrates

Investigation on Surface of p-GaN

Polycrystalline Diamond Film Growth on Gallium Nitride with Low Boundary Thermal Resistance

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Mixed-size diamond seeding for low-thermal-barrier growth of CVD diamond onto GaN and AlN

X-ray Diffraction, Photoluminescence and Secondary Ion Mass Spectroscopy Study of GaN Films Grown on Si(111) Substrate by Vacuum Reactive Evaporation

Surface Reaction Mechanism on GaN MOVPE Growth

On the Ζ-Potential of Nanodiamond in Aqueous Systems

The Effect of Nitridation on Sputtering AlN on Composited Patterned Sapphire Substrate

Molecular-beam-epitaxy Growth of GaN on GaAs(100) by Using Reactive Nitrogen Source

Fabrication of GaN/Diamond Heterointerface and Interfacial Chemical Bonding State for Highly Efficient Device Design

Initial Stages of Growth of the GaN(11 2) Layer on a Nano-structured Si(113) Substrate