Abstract:The flexibility, low weight, and affordability of organic thin‐film transistors (OTFTs) have drawn attention in a variety of applications. A novel conductance–voltage technique for accurate threshold voltage extraction in OTFTs is presented in this article. This nondestructive method can be used on both p‐type and n‐type devices and provides a thorough examination of important parameters along with a variety of useful insights. Interesting effects of traps, doping, bandgap, work function, and characteristic temperature on threshold voltage are revealed by simulations on pentacene and amorphous indium‐gallium‐zinc‐oxide‐based transistors. In the comparative studies, the method's accuracy in comparison to traditional methods is highlighted, proving its worth as an effective tool for device design and optimization in the future. Threshold voltage is an essential component for a transistor to operate properly. In this work, an alternate technique for obtaining the threshold voltage, which is referred to as the conductance–voltage method, is suggested. In this technique, the threshold voltage is estimated by measuring the change in drain current with an applied gate voltage when the device transits from the weak accumulation to the strong accumulation mode of operation. The 2D simulations are then used to apply this strategy to pentacene‐based and amorphous indium‐gallium‐zinc‐oxide‐based thin‐film transistors (TFTs) in their linear region of operation. These seem promising, and the technique offers a useful tool for enhancing the functionality of complementary organic/oxide TFTs in the future.

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Threshold Voltage Model of Short-Channel FD-SOI MOSFETs With Vertical Gaussian Profile

Threshold Voltage Model of Total Ionizing Irradiated Short-Channel FD-SOI MOSFETs with Gaussian Doping Profile

A Physical Threshold Voltage Model of Nanoscale Ultra-thin Body Ultra-thin Box SOI MOSFETs with a Gaussian Doping Profile

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Threshold Voltage Modeling of Deep-Submicron Double-Gate Fully-Depleted SOI MOSFET

Threshold Voltage Model for a Fully Depleted SOI-MOSFET with a Non-Uniform Profile

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Analytic modeling of potential and threshold voltage for short-channel thin-body fully depleted silicon-on-insulator MOSFETs with a vertical Gaussian doping profile

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Analytical Modeling of Threshold Voltage for Double Gate MOSFET

A new deduction of the threshold voltage for short-channel FDSOI MOSFET's using parabolic potential approach

Quantum Mechanical Effects on the Threshold Voltage of Surrounding-Gate Mosfets

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Threshold Voltage Extraction Using Conductance–Voltage Method for Nano‐Organic/Oxide Thin‐Film Transistors: Comparative Study of P‐ and N‐Type Devices

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A 2-D Threshold Voltage Model of front-back Gate Controlled SOI-MOSFET

A Subthreshold Swing Model for FD SOI MOSFET with Vertical Gaussian Profile