Abstract:Conducting polymers is not the only way, inorganic oxides can make electrochemical transistors too. It is shown that ultrathin, flexible, ITO electrolyte‐gated transistors are designed for bioelectronics. These transistors demonstrate high transconductance, excellent on/off ratios, and mechanical flexibility. Via surface passivation strategies are used to enhance the electrochemical stability of ITO, making these devices promising candidates for future in vivo and in vitro bioelectronic applications. Electrolyte‐gated field effect transistors and electrochemical transistors have emerged as powerful components for bioelectronic sensors and biopotential recording devices. A set of parameters must be considered when developing devices to amplify weak electrophysiological signals. These include maximum transconductance values, cut‐off frequencies, and large on/off current ratios. Organic polymer‐based devices have recently dominated the field, especially when considering flexibility as a key factor. Oxide semiconductors may also offer these features, as well as advantages like higher mobility. Herein, flexible, ultrathin, indium tin oxide (ITO) electrolyte‐gated transistors are reported. These accumulation‐mode devices combine n‐type operation with μe = 9.5 cm2 Vs−1, high transconductance (gm = 44 mS), and on/off ratios (105) as well as optically transparent layouts. While oxides are normally considered brittle, mechanically flexible ITO layers are obtained by room temperature deposition of amorphous layers onto parylene C. This process results in low strain, producing devices that survive bending. ITO electrochemically degrades, however, with cycling. To overcome this, the surface is passivated with high dielectric constant inert capping layers of Ta2O5 or Ta2O5/AlN. This greatly improves stability while preserving low gate voltages. Based on their overall performance, ITO‐based EGFETs are promising for bioelectronics.

Threshold Voltage Extraction Using Conductance–Voltage Method for Nano‐Organic/Oxide Thin‐Film Transistors: Comparative Study of P‐ and N‐Type Devices

Accurate Field‐Effect Mobility and Threshold Voltage Estimation for Thin‐Film Transistors with Gate‐Voltage‐Dependent Mobility in Linear Region

Modulation Doping for Threshold Voltage Control in Organic Field-Effect Transistors

Threshold Voltage Control in Dual-Gate Organic Electrochemical Transistors

Improved Performance Of P-Type Pentacene Thin Film Transistor By Inserting Thin Interlayer Of N-Type Organic Semiconductor

Direct Patterning on Top-Gate Organic Thin-Film Transistors: Improvement of On/Off Ratio, Subthreshold Swing, and Uniformity

Abnormal Back Channel Leakage under Large Drain Voltage in Short Channel Organic Thin-Film Transistors

Extraordinarily Weak Temperature Dependence of the Drain Current in Small‐Molecule Schottky‐Contact‐Controlled Transistors through Active‐Layer and Contact Interplay

Dual In-Plane-Gate Oxide-Based Thin-Film Transistors with Tunable Threshold Voltage

Threshold voltage in FD-SOI MOSFETs

Mobility and Threshold Voltage Extraction in Transistors with Gate-Voltage-Dependent Contact Resistance

Low-voltage operating, high mobility top-gate structural flexible organic thin-film transistor with a one-step spin-coated binary polymer gate dielectric

Ultra‐Low Threshold Voltage in N‐Type Organic Electrochemical Transistors Enabled by Organic Mixed Ionic‐Electronic Conductors with Dual Electron‐Withdrawing Substitutions

Highly Efficient All‐Solution‐Processed Low‐Voltage Organic Transistor with a Micrometer‐Thick Low‐k Polymer Gate Dielectric Layer

Modification of Indium Tin Oxide Electrodes by Fluorinated Silanes for Transparent Organic Thin-Film Transistors

Dynamic Threshold Voltage Modulation in Double-Gate Indium-Gallium-Zinc Oxide Thin-Film Transistors: Influence of the Active Layer Thickness

Ultrathin Indium Tin Oxide Accumulation Mode Electrolyte‐Gated Transistors for Bioelectronics

Amorphous IZO-based transparent thin film transistors

High-mobility, Air Stable Bottom-Contact N-Channel Thin Film Transistors Based on N,N′-ditridecyl Perylene Diimide

Low-voltage organic transistors and inverters with ultra-thin fluoropolymer gate dielectric

Understanding Thickness-Dependent Electrical Characteristics in Conjugated Polymer Transistors with Top-Gate Staggered Structure