Abstract:Heterogeneous integration enables high-density integration to improve system functionality, but meanwhile brings reliability concerns due to the intensification of temperature and thermal stress. However, research on thermal stress effects in nanoscale transistors within heterogeneous integrated circuit is still very limited up to now. Multiphysics computation for the heterogeneous integration of nanoscale p-FinFET with GaN high electron mobility transistor (HEMT) on silicon substrate is performed. Firstly, self-heating of GaN HEMT induced thermal stress is simulated. Then, thermal stress effects induced by the GaN HEMT on quantum transport in the FinFET at different locations are compared and analyzed, including the hole effective mass, hole average velocity, on/off-state current, and on-off ratio. Moreover, the impacts of crystal orientation configurations are further discussed. Simulation results show that the impact of thermal stress on FinFET is highly dependent on the Si crystal orientation and its location relative to GaN HEMT. Taking the FinFET with (001)/[110] confinement/transport orientation, which is at a distance of R FET and an angle of φ from the GaN HEMT as an example, thermal stress induces the significant reductions in I on and I off of FinFET at φ = π/2 and φ = 3π/2, and the increases of I on and I off in FinFET at φ = 0 and φ = π, but has small impact on FinFETs located diagonally to the GaN HEMT.

Stochastic Variations in Nanoscale HZO based Ferroelectric finFETs: A Synergistic Approach of READ Optimization and Hybrid Precision Mixed Signal WRITE Operation to Mitigate the Implications on DNN Applications

Freely Switching Between Ferroelectric and Resistive Switching in Hf0.5Zr0.5O2 Films and Its Application on High Accuracy On-Chip Deep Neural Networks

Multiphysics Simulation Study of Thermal Stress Effects in Nanoscale FinFETs Heterogeneously Integrated with GaN High-Power Device on Silicon Substrate

Neuromorphic Computing with Ferroelectric FinFETs in the Presence of Temperature, Process Variation, Device Aging and Flicker Noise

Incremental Drain-Voltage-Ramping Training Method for Ferroelectric Field-Effect Transistor Synaptic Devices

Impact of stochastic mismatch on FinFETs SRAM cell induced by process variation

3-D Simulation of Geometrical Variations Impact on Nanoscale FinFETs

Ferroelectric and Interlayer Co-optimization with In-depth Analysis for High Endurance FeFET

Investigation of Read Disturb for Hf0.5Zr0.5O2 Ferroelectric Field-Effect Transistors Based Neuromorphic Applications

Investigation of Read Disturb for Hf0.5Zr0.502 Ferroelectric Field-Effect Transistors Based Neuromorphic Applications

Powering Disturb-Free Reconfigurable Computing and Tunable Analog Electronics with Dual-Port Ferroelectric FET

A Novel Ferroelectric FET-Based Adaptively-Stochastic Neuron for Stimulated-Annealing Based Optimizer with Ultra-Low Hardware Cost

Hybrid-FE-Layer FeFET with High Linearity and Endurance Toward On-Chip CIM by Array Demonstration

Voltage Bias Scheme Optimization in FeFET Based Neural Network System

A Reliable 2 Bit MLC FeFET with High Uniformity and 109 Endurance by Gate Stack and Write Pulse Co-optimization

An Investigation of HZO-Based n/p-FeFET Operation Mechanism and Improved Device Performance by the Electron Detrapping Mode

A Hybrid 3D Quantum Mechanical Simulation of FinFETs and Nanowire Devices

Study On Scalability Of Hybrid Junctionless Finfet And Multi-Stacked Nanowire Fet By Tcad Simulation

Hybrid-Precision Synapse Based-on FDSOI FeFETs with Back-Gate Bias Modulation

Van Der Waals Ferroelectric Transistors: the All-Round Artificial Synapses for High-Precision Neuromorphic Computing

An Optimized FinFET Channel with Improved Line-Edge Roughness and Linewidth Roughness Using the Hydrogen Thermal Treatment Technology