Hybrid-FE-Layer FeFET with High Linearity and Endurance Toward On-Chip CIM by Array Demonstration

Yuejia Zhou,Hanyong Shao,Runteng Zhu,Wenpu Luo,Weiqin Huang,Linbo Shan,Ru Huang,Kechao Tang
DOI: https://doi.org/10.1109/led.2023.3346030
IF: 4.8157
2024-01-01
IEEE Electron Device Letters
Abstract:Analog weight cells based on ferroelectric field-effect transistors (FeFETs) are promising for fast and energy efficient compute-in-memory (CIM) accelerators, yet their on-chip training is hindered by the limited linearity and endurance. To address this critical issue, we introduced a novel FeFET design featuring a hybrid ferroelectric layer of Hf 0.5 Zr 0.5 O 2 and Hf 0.95 Al 0.05 O 2 with Al 2 O 3 interlayers. The proposed FeFET achieves a high linearity of α p = -0.48 and α d = -1.73, good endurance of over 10 9 cycles, and a fast switching speed of ~50ns. The mechanism of such improvement was probed carefully by comparison with control devices. The benefit of device optimization was experimentally demonstrated by performing an on-chip training task on a 1T NOR array, and the system-level benchmarking of the CIM accelerator based on our FeFET shows an overall superior performance. This work contributes to the development of FeFETs for on-chip neuromorphic hardware.
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