Laminated Ferroelectric FET With Large Memory Window and High Reliability
Hyun Jae Lee,Seunggeol Nam,Yunseong Lee,Kihong Kim,Duk-Hyun Choe,Sijung Yoo,Yoonsang Park,Sanghyun Jo,Donghoon Kim,Jinseong Heo
DOI: https://doi.org/10.1109/ted.2024.3371945
IF: 3.1
2024-03-30
IEEE Transactions on Electron Devices
Abstract:In this work, we report a planar Si-based ferroelectric field-effect transistor (FEFET) characterized by a high memory window (MW) of 4.79 V, ten-year retention, and pass disturb-free characteristics. This achievement is realized through the use of a 20-nm-thick laminated Hf Zr0.5O2 (L-HZO) film with Al2O3 (AO)-insertion layers (ILs). The 2.4-Å-thick AO-ILs effectively severed the bulk-HZO film and scaled down each FE-thickness ( ) in the L-HZO. This resulted in suppression of non-FE monoclinic phase formation to less than 10%, and more notably, an increase in the coercive field ( ) within the FE stack. With an increase in the number of HZO-lamination ( ), the was enhanced by 76% in L-HZO ( = 4) compared to single-HZO (S-HZO). This led to an increase in effective polarization ( ), representing the portion of remnant polarization ( ) uncompensated by channel-injected charge, thereby validly influencing the threshold voltage ( ) shift of FEFET. The augmented in L-HZO (350% increase compared to S-HZO) was directly confirmed through a more pronounced shift by the change of , which was 230% steeper in L-HZO compared to S-HZO. The revealed mechanism behind the enhanced MW and reliability in laminated-FE, stemming from the increased rooted in enlarged , paves the way for designing the FE-stack for high-density memory or neuromorphic applications.
engineering, electrical & electronic,physics, applied