Voltage Bias Scheme Optimization in FeFET Based Neural Network System

Jiayi Zhao,Bing Chen,Ning Liu,Jiuren Zhou,Ran Cheng,Yan Liu,Genquan Han
DOI: https://doi.org/10.1109/led.2023.3300371
IF: 4.8157
2023-08-29
IEEE Electron Device Letters
Abstract:In this work, we focused on the performance optimization of the neural network (NN) system in the synaptic device of HfAlOx (HAO)-based ferroelectric field-transistors (FeFET), especially with the voltage bias scheme. The weights linearity, power consumption, and current ratio of the HAO-FeFET based synapse are measured under different voltage bias. Using the open-source tool "NeuroSim , the training accuracy, and power efficiency can be evaluated. It shows that the performance of the NN is highly dependent on gate/drain's voltages bias of the FeFETs. To suppress the nonlinearity of both the potentiation and depression during online training, the FeFET were biased at the triode and saturation region respectively under a large gate voltage bias. However, the power consumption will increase for inference, which should be a trade-off for system optimization.
engineering, electrical & electronic
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