Optimization Method for Conductance Modulation in Ferroelectric Transistor for Neuromorphic Computing (Adv. Electron. Mater. 5/2024)

Cheol Jun Kim,Jae Yeob Lee,Minkyung Ku,Tae Hoon Kim,Taehee Noh,Seung Won Lee,Ji‐Hoon Ahn,Bo Soo Kang
DOI: https://doi.org/10.1002/aelm.202470019
IF: 6.2
2024-05-10
Advanced Electronic Materials
Abstract:Ferroelectric Transistors for Neuromorphic Computing This cover image depicts a ferroelectric transistor, illustrating how the conductive path within the channel layer mirrors the ferroelectric domain structure above. Voltage‐induced polarization switching induces conductive clusters in the channel layer, providing multiple conductance levels used as weight values. The study by Bo Soo Kang and co‐workers (article number 2300698) highlights the application of Landau–Ginzburg–Devonshire simulations for optimizing conductance modulation in these transistors, thereby advancing efficiency in neuromorphic computing.
materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
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