Abstract:A dual‐gate synaptic transistor, integrating nonvolatile ferroelectric polarization and interface charge trapping/de‐trapping memory, is proposed to fulfill the bi‐directional dynamic modulation on synaptic plasticity, where the conversion between excitatory and inhibitory plasticity is manipulated by two different approaches. Moreover, the back‐gate voltage significantly controls the conductance range, therefore improving the visual recognition precision. The dynamic modulation of the plasticity of artificial neuromorphic devices facilitates a wide range of neuromorphic functions. However, integrating diverse plasticity modulation techniques into a single device presents a challenge due to limitations in the device structure design. Here, a multiterminal artificial synaptic device capable of bi‐directional modulation on its plasticity is proposed. Significantly, the conversion of inhibitory and excitatory synaptic plasticity can be achieved not only by modifying the polarity of the presynaptic voltage spike but also by exchanging its input terminal between top and bottom gate while maintaining the same presynaptic stimuli. This unique bi‐directional modulation of synaptic plasticity has been attributed to two distinct physical mechanisms: nonvolatile ferroelectric polarization and interface charge trap‐induced memory characteristics. Additionally, the effective dynamic modulation of the synaptic behaviors is quantified under different back‐gate bias and verified in the constructed neural network perceptron. Further, a visual simulation demonstrates the enhanced clarity and precision of edge recognition through the back‐gate modulation in the artificial synapses. This study provides a strategy to fulfill diversified modulation on synaptic plasticity in ferroelectric‐gated transistors, thereby prompting efficient and controllable neuromorphic visual systems.

Hybrid-Precision Synapse Based-on FDSOI FeFETs with Back-Gate Bias Modulation

Design-Technology Co-Optimizations for Symmetric Linear Synapse Behaviors in Ferroelectric FET Based Neuromorphic Computing

Selective Release of Excitatory‐Inhibitory Neurotransmitters Emulated by Unipolar Synaptic Transistors via Gate Voltage Amplitude Modulation

Accelerating On-Chip Training with Ferroelectric-Based Hybrid Precision Synapse

Van Der Waals Ferroelectric Transistors: the All-Round Artificial Synapses for High-Precision Neuromorphic Computing

Two-dimensional Ferroelectric Semiconductor Floating-Gate Transistor with Light-Tunable Field Effect for Memory and Photo-Synapse

Organic Ferroelectric Transistors with Composite Dielectric for Efficient Neural Computing

Tailoring Neuroplasticity in a Ferroelectric‐Gated Multi‐Terminal Synaptic Transistor by Bi‐Directional Modulation for Improved Pattern Edge Recognition

Nonlinear Dynamics in HfO2/SiO2-Based Interface Dipole Modulation Field-Effect Transistors for Synaptic Applications

Ferroelectric Hf0.5Zr0.5O2-gated synaptic transistors with large conductance dynamic range and multilevel states

Optimal Weight Models for Ferroelectric Synapses Toward Neuromorphic Computing

Ultralow-Power Compact Artificial Synapse Based on a Ferroelectric Fin Field-Effect Transistor for Spatiotemporal Information Processing

Demonstration of synaptic characteristics of polycrystalline-silicon ferroelectric thin-film transistor for application of neuromorphic computing

A Hybrid FeMFET-CMOS Analog Synapse Circuit for Neural Network Training and Inference

A Ferroelectric Reconfigurable Memory with Excitatory and Inhibitory Synaptic Responses

TCAD simulation study of dual ferroelectric gate field-effect transistors with a recessed channel geometry for non-volatile memory applications

Highly Linear and Symmetric Synaptic Memtransistors Based on Polarization Switching in Two‐Dimensional Ferroelectric Semiconductors

Multi-gate Synergic Modulation in Laterally Coupled Synaptic Transistors

Dual-pulse Disturb-Free Programming Scheme for FeFET Based Neuromorphic Computing

High Conductance Margin for Efficient Neuromorphic Computing Enabled by Stacking Nonvolatile van der Waals Transistors

Hybrid Stochastic Synapses Enabled by Scaled Ferroelectric Field-effect Transistors