Abstract:Capacitance measurements as a function of voltage, frequency, and temperature are a useful tool to gain a deeper insight into the electronic properties of semiconductor devices in general and of solar cells in particular. Techniques such as capacitance-voltage, Mott-Schottky analysis, or thermal-admittance spectroscopy measurements are frequently employed in perovskite solar cells to obtain relevant parameters of the perovskite absorber. However, state-of-the-art perovskite solar cells use thin electron- and hole-transport layers to improve the contact selectivity. These contacts are often quite resistive in nature, which implies that their resistance will significantly contribute to the total device impedance and thereby also affect the overall capacitance of the device, thus partly obscuring the capacitance signal from the perovskite absorber. Based on this premise, we develop a simple multilayer model that considers the perovskite solar cell as a series connection of the geometric capacitance of each layer in parallel with their voltage-dependent resistances. Analysis of this model yields fundamental limits to the resolution of spatial doping profiles and minimum values of doping and trap densities, built-in voltages, and activation energies. We observe that most of the experimental capacitance-voltage-frequency-temperature data, calculated doping and defect densities, and activation energies reported in the literature are within the derived cutoff values, indicating that the capacitance response of the perovskite solar cell is indeed strongly affected by the capacitance of its selective contacts.

Anomalous Scaling Exponents of Capacitance-Voltage Characteristics

Analytical and numerical modeling of capacitance voltage characteristics of organic solar cells

Understanding Capacitance Variation in Sub-Nanometer Pores by In-Situ Tuning of Interlayer Constrictions.

Capacitance-voltage characteristics of a metal-carbon-silicon structure

Modeling and Analysis for MOS Capacitance of TSV Considering Temperature Dependence

Anomalous Capacitance-Voltage Characteristics of Al/Al-Rich Al2o3/P-Si Capacitors and Their Reconstruction

Microscopic model for the nonlinear behavior of high-k metal-insulator-metal capacitors

On the anomalous peak and negative capacitance in the capacitance–voltage (C–V) plots of Al/(%7 Zn-PVA)/p-Si (MPS) structure

Nonlinear Quantum Capacitance

Microscopic Model for Cyclic Voltammetry of Porous Electrodes

A physics-based analytical surface potential and capacitance model of MOSFET's operation from accumulation to depletion region

Generalization of Linearized Gouy-Chapman-Stern Model of Electric Double Layer for Nanostructured and Porous Electrodes: Deterministic and Stochastic Morphology

Electric Field-Induced Permittivity Enhancement in Negative-Capacitance FET

Large, light-induced capacitance enhancement in semiconductor junctions simulated by capacitor-resistor nets

Anomalous capacitive behaviors of graphene oxide based solid-state supercapacitors.

Nanoscale Capacitance: A Quantum Tight-Binding Model

Voltage Dependent Capacitances In Cacu3ti4o12

Anomalous Capacitance-Voltage Hysteresis in MOS Devices with ZrO2 and HfO2 Dielectrics

A Carrier-Based Analytic Theory For Electrical Simulation Of Negative Capacitance Surrounding Gate Ferroelectric Capacitor

Multilayer Capacitances: How Selective Contacts Affect Capacitance Measurements of Perovskite Solar Cells

Reevaluation of Performance of Electric Double-layer Capacitors from Constant-current Charge/Discharge and Cyclic Voltammetry