Abstract:Supercapacitors, S-C - capacitors that take advantage of the large capacitance at the interface between an electrode and an electrolyte - have found many short-term energy applications. We concentrate here on optically induced, electrical and thermal effects. The parallel plate cells were made of two transparent electrodes (ITO), each covered with semiconductor-embedded, active carbon (A-C) layer. While A-C appears black, it is not an ideal blackbody absorber that absorbs all spectral light indiscriminately. In addition to relatively flat optical absorption background, A-C exhibits two distinct absorption bands: in the near-IR and in the blue. The first may be attributed to absorption by OH- group and the latter, by scattering, possibly by surface plasmons. Here, optical and thermal effects of sub-micron size SiC particles that are embedded in A-C electrode, are presented. Similarly to nano-Si particles, SiC exhibits blue band absorption, but it is less likely to oxidize. Using Charge-Discharge (CD) experiments, the relative optically related capacitance increase may be as large as ~34% (68% when the illuminated area is taken into account). Capacitance increase was noted as the illuminated samples became hotter. This thermal effect amounts to 20% of the overall relative change using CD experiments. The thermal effect was quite large when the SiC particles were replaced by CdSe/ZnS quatum dots; for the latter, the thermal effect was 35% compared with 10% for the optical effect. When analyzing the optical effect one may consider two processes: ionization of the semiconductor particles and charge displacement under the cell's terminals - a dipole effect. Our model suggests that the capacitance increase is related to an optically induced dipole.

Large, light-induced capacitance enhancement in semiconductor junctions simulated by capacitor-resistor nets

Capacitance-voltage characteristics of a metal-carbon-silicon structure

Nanoscale Capacitance: A Quantum Tight-Binding Model

High volumetric capacitance near insulator-metal percolation transition

Electric Field-Induced Permittivity Enhancement in Negative-Capacitance FET

Simulation of Electrolytic Capacitance for the Oxide-Based Electric-Double-layer Transistors

An Efficient Nonlinear Capacitance Model for SOIFET Used As A Switch

Capacitance modeling of complex topographical silicon quantum dot structures

Full capacitance-matrix effects in driven Josephson-junction arrays

Increase of Capacitance of Thick Dielectrics by Fringe Effect

Modeling of Negative Capacitance of Ferroelectric Capacitors as a Non-Quasi Static Effect

Anomalous Scaling Exponents of Capacitance-Voltage Characteristics

Optically Controlled Supercapacitors with Semiconductor Embedded Active Carbon Electrodes

A Carrier-Based Analytic Theory For Electrical Simulation Of Negative Capacitance Surrounding Gate Ferroelectric Capacitor

Simulating Capacitances to Silicon Quantum Dots: Breakdown of the Parallel Plate Capacitor Model

Electrical Simulation Model to Improve Through-Silicon Capacitor(TSC) Capacitance

Simulation of the transient photocurrent response of polycrystalline photocells based on equivalent circuit analysis

The Suppression Mechanism of Parasitic Capacitance for Comb Capacitor Fabricated with Silicon-On-Insulation

Negative Capacitance in Light-Emitting Devices

Computational Insights into Materials and Interfaces for Capacitive Energy Storage

Elucidating Negative Capacitance In Light-Emitting Diodes Using An Advanced Semiconductor Device Theory