Abstract:Silicon carbide (SiC), an important semiconductor material used in high-power devices, faces the problem of gate oxygen layer formation in traditional Si MOS devices. In view of this, an innovative approach was adopted in the present work to replace the conventional SiO 2 as the gate oxygen layer with a high-k material (ZrO 2 ) so as to investigate its effect on the electrical characteristics of the appliance. In particular ZrO 2 films were deposited on SiC and Si substrates by atomic layer deposition (ALD), and Al was used as the electrode. The atomic force microscopy (AFM) microregion scan revealed a highly flat surface with Rq<1 nm after the ALD growth of ZrO 2 layer. The sample surface analysis via X-ray photoelectron spectroscopy (XPS) suggested the presence of a small amount of ZrO x components. According to the electron energy loss spectrum (EELS), the band gap width (Eg) of this ALD ZrO 2 dielectric was 5.45 eV, which met the requirements for high-quality 4H-SiC-related MOS devices. The electrical properties of the samples were then studied, and the maximum breakdown electric field of the MOS capacitor structure on the SiC substrate was obtained to be more than 10 MV/cm, i.e., nearly twice that of the Si substrate. Based on capacitance-voltage (C-V) measurements, the interface defect density (Dit) near the conduction band of the MOS capacitive structure of the SiC substrate was only on the order of 10 12 eV -1 cm -2 . The movable charge Neffof the oxide layer was also controlled at 10 12 cm -2 . Therefore, the overall performance of the ZrO 2 /SiC structure in terms of electrical properties exceeds that of the ZrO 2 /Si structure and previously reported counterparts. Thus, the combination of the high-k material (ZrO 2 ) and SiC as the substrates in MOS capacitor structures is a very promising research direction.

Voltage-dependent Capacitance Behavior and Underlying Mechanisms in Metal–insulator–metal Capacitors with Al2O3–ZrO2–SiO2nano-laminates

Conduction Mechanisms of Mim Capacitors with Zro2/Sio2/Zro2 Stacked Dielectrics and Ni Electrodes

Dielectric Properties Investigation of Metal–Insulator–Metal (MIM) Capacitors

Voltage Linearity Modulation and Polarity Dependent Conduction in Metal-Insulator-metal Capacitors with Atomic-Layer-deposited Al2O3/ZrO2/SiO2 Nano-Stacks

High Frequency Capacitance–voltage Characterization of Al2O3/ZrO2/Al2O3 in Fully Depleted Silicon-on-insulator Metal–oxide–semiconductor Capacitors

High Density Al2O3/TaN-based Metal–insulator–metal Capacitors in Application to Radio Frequency Integrated Circuits

Improvement of Voltage Linearity and Leakage Current of MIM Capacitors with Atomic Layer Deposited Ti-Doped ZrO2 Insulators

Electric and Dielectric Characteristics of Al/ZrO2/IL/n-Si MOS Capacitors Using Three-Frequency Correction Method

Improved Dielectric Constant and Leakage Current of ZrO$_{\text{2}}$-Based Metal–Insulator– Metal Capacitors by Si Doping

Full ALD Al2O3/ZrO2/SiO2/ZrO2/Al2O3Stacks for High-Performance MIM Capacitors

Dielectric Enhancement of Atomic Layer-Deposited Al2O3/ZrO2/Al2O3 MIM Capacitors by Microwave Annealing

Atomic-layer-deposited Al2O3-HfO2 Laminated and Sandwiched Dielectrics for Metal–insulator–metal Capacitors

Demonstration and Characterization of 500 V MIM Capacitor with Al2O3 Dielectric Layer for Power Integrated Circuits

Engineering of voltage nonlinearity in high-k MIM capacitor for analog/mixed-signal ICs

RF, DC, and Reliability Characteristics of ALD HfO/sub 2/-Al/sub 2/o/sub 3/ Laminate MIM Capacitors for Si RF IC Applications

Electrical Characteristics and Conduction Mechanisms of Metal-Insulator-Metal Capacitors with Nanolaminated Al(2)O(3)-Hfo(2) Dielectrics

Electronic Properties of ZrO2 Films Fabricated via Atomic Layer Deposition on 4H-SiC and Si Substrates

Flexible Al-Ti-Zn-O MIM Capacitors Fabricated by Room Temperature Atomic Layer Deposition and Their Electrical Performances

Three-Dimensional Metal-Insulator-Metal Decoupling Capacitors with Optimized ZrO2 ALD Properties for Improved Electrical and Reliability Parameters

High-performance MIM Capacitor Using ALD High-K HfO2-Al2O3 Laminate Dielectrics

A comparison study of high-density MIM capacitors with ALD HfO2-Al2O3 laminated, sandwiched and stacked dielectrics