Abstract:Nano-laminates consisting of high-permittivity dielectrics and SiO2 have been extensively studied for radio frequency metal-insulator-metal (MIM) capacitors because of their superior voltage linearity and low leakage current. However, there are no reports on the capacitance-voltage (C-V) characteristics at a high sweep voltage range. In this work, an interesting variation in the voltage-dependent capacitance that forms a 'omega'-like shape is demonstrated for the MIM capacitors with Al2O3/ZrO2/SiO2 nano-laminates. As the thickness ratio of the SiO2 film to the total insulator increases to around 0.15, the C-V curve changes from an upward parabolic shape to a 'omega' shape. This can be explained based on the competition between the orientation polarization from SiO2 and the electrode polarization from Al2O3 and ZrO2. When the SiO2 film is very thin, the electrode polarization dominates in the MIM capacitor, generating a positive curvature C-V curve. When the thickness of SiO2 is increased, the orientation polarization is enhanced and thus both polarizations are operating in the MIM capacitors. This leads to the appearance of a multiple domain C-V curve containing positive and negative curvatures. Therefore, good consistency between the experimental results and the theoretical simulations is demonstrated. Such voltage-dependent capacitance behavior is not determined by the stack structure of the insulator, measurement frequency and oscillator voltage, but by the thickness ratio of the SiO2 film to the whole insulator. These findings are helpful to engineer MIM capacitors with good voltage linearity.

Engineering of voltage nonlinearity in high-k MIM capacitor for analog/mixed-signal ICs

Improvement of Voltage Linearity in High-&lt;tex&gt;$kappa$&lt;/tex&gt;MIM Capacitors Using&lt;tex&gt;$hbox HfO_2hbox --hbox SiO_2$&lt;/tex&gt;Stacked Dielectric

High-performance MIM Capacitor Using ALD High-K HfO2-Al2O3 Laminate Dielectrics

Full ALD Al2O3/ZrO2/SiO2/ZrO2/Al2O3Stacks for High-Performance MIM Capacitors

Voltage-dependent Capacitance Behavior and Underlying Mechanisms in Metal–insulator–metal Capacitors with Al2O3–ZrO2–SiO2nano-laminates

Dielectric Properties Investigation of Metal–Insulator–Metal (MIM) Capacitors

Demonstration and Characterization of 500 V MIM Capacitor with Al2O3 Dielectric Layer for Power Integrated Circuits

High Performance Ald Hfo2-Al2o3 Laminate Mim Capacitors for Rf and Mixed Signal Ic Applications

Microscopic model for the nonlinear behavior of high-k metal-insulator-metal capacitors

High performance ALD HfO/sub 2/-Al/sub 2/O/sub 3/ laminate MIM capacitors for RF and mixed signal IC applications

MIM Capacitors Featuring Low EOT and Low Leakage Current Density by Nitrogen-Incorporated HfO2/ZrO2/HfO2

High-Performance MIM Capacitors for a Secondary Power Supply Application

A comparison study of high-density MIM capacitors with ALD HfO2-Al2O3 laminated, sandwiched and stacked dielectrics

The study on metal-insulator-metal capacitor performance improvement

A comparison study of high-density MIM capacitors with ALD HfO/sub 2/-Al/sub 2/O/sub 3/ laminated, sandwiched and stacked dielectrics

Improvement of Voltage Linearity and Leakage Current of MIM Capacitors with Atomic Layer Deposited Ti-Doped ZrO2 Insulators

RF, DC, and Reliability Characteristics of ALD HfO/sub 2/-Al/sub 2/o/sub 3/ Laminate MIM Capacitors for Si RF IC Applications

Atomic-layer-deposited Al2O3-HfO2 Laminated and Sandwiched Dielectrics for Metal–insulator–metal Capacitors

Simultaneous electric dipoles and flat-band voltage modulation in 4H-SiC MOS capacitors through HfO2/SiO2 interface engineering

High Density Al2O3/TaN-based Metal–insulator–metal Capacitors in Application to Radio Frequency Integrated Circuits

Metal-insulator-metal Capacitors Using Atomic-Layer-deposited Al2O3∕HfO2∕Al2O3 Sandwiched Dielectrics for Wireless Communications