Abstract:The electrical characteristics of Ni electrode-based metal-insulator-metal (MIM) capacitors have been investigated with atomic layer deposited ZrO2/SiO2/ZrO2 symmetric stacked-dielectrics. When the thickness of the stacked-dielectrics is fixed at 14 nm, the resulted capacitance density decreases from 13.1 fF/m(2) to 9.3 fF/m(2), and the dissipation factor is reduced from 0.025 to 0.02. By comparison of current-voltage (I-V) curves of different MIM capacitors, it is found that the leakage current density in the high voltage region decreases gradually with the increasing thickness of SiO2, and it does not exhibit clear change in the low voltage region. Meanwhile, the capacitors show different conduction behaviors under positive and negative biases with increasing the thickness of SiO2 from 0 to 2 nm. Under the positive bias, different I-V characteristics are demonstrated at high and low electric fields, respectively. However, a single I -V characteristic is dominant under the negative bias. Further, the conduction mechanisms of the capacitors are investigated under the electron bottom and top injection modes, respectively. It is found that the Poole-Frenkel emission and the trap-assisted tunneling are dominant in the high and low field regions, respectively, for the electron bottom injection; however, the trap-assisted tunneling is dominant in the whole field region for the electron top injection. These are attributed to the formation of a thin NiOx interfacial layer between the Ni bottom-electrode and the ZrO2 dielectric layer, as well as the existence of both deep and shallow level traps (0.9 and 2.3 eV) in the ZrO2 dielectric. Therefore, the level trap plays a key role in the electron conduction in the MIM capacitor under different electron injection modes and different electric fields.

The study on metal-insulator-metal capacitor performance improvement

Dielectric Properties Investigation of Metal–Insulator–Metal (MIM) Capacitors

Electromagnetic–Thermo–Mechanical Coupling Behavior of Cu/Si Layered Thin Plate under Pulsed Magnetic Field

Full ALD Al2O3/ZrO2/SiO2/ZrO2/Al2O3Stacks for High-Performance MIM Capacitors

Conduction Mechanisms of Mim Capacitors with Zro2/Sio2/Zro2 Stacked Dielectrics and Ni Electrodes

High-Performance MIM Capacitors Using Zr-Sn-Ti-O Dielectrics Derived from Atomic Layer Deposition

Improvement of Voltage Linearity in High-&lt;tex&gt;$kappa$&lt;/tex&gt;MIM Capacitors Using&lt;tex&gt;$hbox HfO_2hbox --hbox SiO_2$&lt;/tex&gt;Stacked Dielectric

Metal-insulator-metal Capacitors Using Atomic-Layer-deposited Al2O3∕HfO2∕Al2O3 Sandwiched Dielectrics for Wireless Communications

High-Performance MIM Capacitors for a Secondary Power Supply Application

A comparison study of high-density MIM capacitors with ALD HfO2-Al2O3 laminated, sandwiched and stacked dielectrics

Improvement of Voltage Linearity and Leakage Current of MIM Capacitors with Atomic Layer Deposited Ti-Doped ZrO2 Insulators

Demonstration and Characterization of 500 V MIM Capacitor with Al2O3 Dielectric Layer for Power Integrated Circuits

A comparison study of high-density MIM capacitors with ALD HfO/sub 2/-Al/sub 2/O/sub 3/ laminated, sandwiched and stacked dielectrics

Engineering of voltage nonlinearity in high-k MIM capacitor for analog/mixed-signal ICs

Influence of Ta and TaN Bottom Electrodes on Electrical Performances of MIM Capacitors with Atomic-Layer-deposited HfO2 Dielectric

Voltage-dependent Capacitance Behavior and Underlying Mechanisms in Metal–insulator–metal Capacitors with Al2O3–ZrO2–SiO2nano-laminates

Atomic-layer-deposited SiO2/TiO2/SiO2 Sandwiched Dielectrics for Metal–insulator–metal Capacitor Application

High Density Al2O3/TaN-based Metal–insulator–metal Capacitors in Application to Radio Frequency Integrated Circuits

Comparison of Electrical Performances of Metal-Insulator-metal Capacitors with Sputtered HfO2 and BZT-HfO2 Dielectrics

Dielectric Enhancement of Atomic Layer-Deposited Al2O3/ZrO2/Al2O3 MIM Capacitors by Microwave Annealing

Breakdown voltage and TDDB performance improvement by optimizing the PECVD dielectric film characteristics in MIM capacitors