Voltage Dependent Capacitances In Cacu3ti4o12

XiaoJing Luo,Changping Yang,XuePing Song,Chang Huang,Ruilong Wang,Lingfang Xu,Klaus Herrmann Otto Bärner
DOI: https://doi.org/10.1063/1.3562180
IF: 2.877
2011-01-01
Journal of Applied Physics
Abstract:The capacitance-dc voltage relation has been investigated in the giant dielectric constant material CaCu3Ti4O12. A capacitance drop, rise and even maxima, minima have been found with increasing dc voltage, which could not simply be explained by the back-to-back Schottky barrier theory. A trap charges repositioning between field perpendicular boundaries and field parallel boundaries has been put forward to explain the strange C-V relations. In addition, a first order calculation of C-V has been done based on the charge repositioning model and has led to a successful fitting of the experimental curves, extracting parameters such as a polarisability of about 1.5 x 10(-39) for the induced dipoles. (C) 2011 American Institute of Physics. [doi:10.1063/1.3562180]
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