Abstract:The effect of manganese doping on the dielectric properties of CaCu3Ti4-xMnxO12 (x = 0, 0.02, 0.04) were investigated over a broad temperature range (93–723 K) in the frequency range from 100 Hz to 10 MHz. Two dielectric relaxations and two dielectric anomalies were observed. The low-temperature relaxation appearing in the temperature range below 200 K is the characteristic relaxation for CaCu3Ti4O12. This relaxation was attributed to the polaron relaxation due to electron hopping between Ti3+ and Ti4+ states. Due to the negative factors of notable decreases in the Ti3+/Ti4+ and Cu3+/Cu2+ ratios and the concentration of oxygen vacancies as revealed by X-ray photoemission spectroscopy, Mn-doping was found to gradually destroy rather than move this relaxation to a higher temperature. The high-temperature relaxation occurring around room temperature was found to be a Maxwell-Wagner relaxation caused by grain boundaries. Our results confirm that the colossal dielectric behavior in the tested samples results from both polaron and Maxwell-Wagner relaxations, but is predominated by the latter relaxation. The low-temperature anomaly behaves as a phase-transition-like behavior. It was argued to be created by oxygen vacancies transition from static disorder to dynamic disorder. The high-temperature anomaly is an artificial effect caused by negative capacitance.

Surface-Layer Effect In Cacu3ti4o12

Maxwell–Wagner relaxation in CaCu3Ti4O12/Ag composites

Dielectric properties and relaxation mechanism of CaCu3Ti4O12 ceramics

Origin of High-Temperature Relaxor-Like Behavior in Cacu3ti4o12

Cacu3ti4o12 Films Prepared by Magnetron Sputtering

Surface-layer Effect in MnTiO3 Ceramics at Low Temperatures

Dielectric Anomalies in Cacu3ti4o12 at High Temperatures

Oxygen-defects-related dielectric response in CaCu3Ti4O12 ceramics

Surface Layer and Its Effect on Dielectric Properties of SiC Ceramics

Microstructure and Dc Conduction Properties of Cacu3 Ti4o12

Oxygen-vacancy-related Dielectric Anomaly Incacu3ti4o12: Post-sintering Annealing Studies

Effect of Oxygen Content on Giant Dielectric Constant and Dielectric Process in Cacu3ti4o12

Voltage Dependent Capacitances In Cacu3ti4o12

Electronic Relaxation Of Deep Bulk Trap In Cacu3ti4o12 Ceramics: Post-Annealing Studies

Dielectric Properties of Pure and Mn-doped CaCu3Ti4O12 Ceramics over a Wide Temperature Range

Investigation Of Size Effect On The Giant Dielectric Cacu3ti4o12 Ceramic

Dielectric Relaxations And Formation Mechanism Of Giant Dielectric Constant Step In Cacu3ti4o12 Ceramics

Density Functional Theory Study on the Atomic Structure and Electronic States of Cu(100) (2×22)R45°-O Surface

The Novel Effects of Cu-deficient on the Dielectric Properties and Voltage–current Nonlinearity in CaCu3Ti4O12 Ceramics

Defect Structure of the High-Dielectric-Constant Perovskite Cacu3ti4o12

Raman and Dielectric Spectra of Cacu3ti3.9o12 Ceramics