Abstract:The influence of annealing after sintering on the non-ohmic and dielectric behavior of CaCu3Ti4O12 ceramics was investigated from -140 to 200 degrees C. Sintering at 1080 degrees C was followed by a cooling rate of 2.5 degrees C/min and quenching to ambient temperature for comparison. And both ceramic samples were annealed in flowing O-2, then N-2 and O-2 again at 950 degrees C. It was found that annealing in O-2 can reduce dielectric loss and enhance non-ohmic behavior of the quenched sample, while dielectric loss rose back up again after annealing in N-2. On the contrary, the slow cooled sample showed low dielectric loss, analogous to annealing in O-2. Trapped electron relaxation processes caused by V-o(+) and V-0(++) in the depletion layer of Schottky barrier can be identified, and the energy levels were deduced to 0.10 eV and 0.49 eV respectively. A relaxation with an energy level of 0.66 eV was detected in slowly cooled sample, which can be eliminated by annealing in N-2 and then re-created by annealing in O-2. This energy level was proposed to relate with the additional interface states caused by oxygen adsorption along the interface. Introducing more electronegative defects at boundaries was supposed as a promising solution to promote the application of CCTO as non-ohmic device with low dielectric loss

Oxygen-vacancy-related Dielectric Anomaly Incacu3ti4o12: Post-sintering Annealing Studies

Annealing Effects on Conductivity and Microwave Dielectric Loss of Mgtio3 Ceramics

Dielectric Anomalies in Cacu3ti4o12 at High Temperatures

Annealing Temperature Dependent Microstructure and Optical Properties of HfxTi1-xO2 Thin Films

Annealing Temperature Dependence on the Structural and Optical Properties of Sputtering-Grown High-K HfO2 Gate Dielectrics

Electronic Relaxation Of Deep Bulk Trap In Cacu3ti4o12 Ceramics: Post-Annealing Studies

Effect of Oxygen Content on Giant Dielectric Constant and Dielectric Process in Cacu3ti4o12

Effects of Postanneal Conditions on the Dielectric Properties of CaCu3Ti4O12 Thin Films Prepared on Pt/Ti/SiO2/Si Substrates

Oxygen-defects-related dielectric response in CaCu3Ti4O12 ceramics

Impedance Spectroscopy and Thermally Simulated Depolarization Current Study of Barium Strontium Titanate Glass Ceramics: Effect of Thermal Annealing Atmosphere on Dielectric Property

Origin of the Temperature Stability of Dielectric Constant in CaCu3Ti4O12

Origin of High-Temperature Relaxor-Like Behavior in Cacu3ti4o12

Surface-Layer Effect In Cacu3ti4o12

Reducing dielectric loss in CaCu3Ti4O12 thin films by high-pressure oxygen annealing

Effect of the Oxidizing Atmosphere on the Microstructure and Dielectric Properties of CaCu3Ti4O12 Ceramics

Influence of sintering temperature on giant dielectric property of CaCu3Ti4O12

Dielectric properties and relaxation mechanism of CaCu3Ti4O12 ceramics

Polaron relaxation and non-ohmic behavior in CaCu3Ti4O12 ceramics with different cooling methods

Dielectric Relaxation and Electrical Conductivity in Ca5Nb4TiO17 Ceramics

The effect of annealing oxygen concentration in the transformation of CaxCoO2 to thermoelectric Ca3Co4O9

Improvement on dielectric properties of CaCu3Ti4O12 ceramics by heat treatment in rich oxygen atmosphere