Reducing Dielectric Loss in CaCu3Ti4O12 Thin Films by High-Pressure Oxygen Annealing

Y. Lin,D. Y. Feng,M. Gao,Y. D. Ji,L. B. Jin,G. Yao,F. Y. Liao,Y. Zhang,C. L. Chen

DOI: https://doi.org/10.1039/c5tc00197h

IF: 6.4

2015-01-01

Journal of Materials Chemistry C

Abstract:High pressure oxygen annealing could reduce the dielectric loss in CCTO films as well as induce obvious difference in strain status.

What problem does this paper attempt to address?

Annealing Temperature Dependent Microstructure and Optical Properties of HfxTi1-xO2 Thin Films

J. W. Zhang,G. He,J. Gao,X. S. Chen,X. F. Chen,B. Deng,Y. M. Liu,M. Zhang,J. G. Lv,Z. Q. Sun

DOI: https://doi.org/10.1166/sam.2014.2124

2014-01-01

Science of Advanced Materials

Abstract:High-permittivity hafnium titanate (HfxTi1-xO2) films have been deposited on Si substrates by RF sputtering and subjected to rapid thermal annealing at various temperatures in air. Post annealing temperature dependent microstructure and optical properties of the HfxTi1-xO2 films were investigated by X-ray diffraction (XRD), spectroscopic ellipsometry (SE), atomic force microscope (AFM), and ultraviolet-visible spectroscope (UV-Vis). Analysis from XRD reveals that the as-deposited films are amorphous as well as those samples annealed at lower annealing temperature. However, with increasing annealing temperature, polycrystalline structure with highly (-111) preferential orientation appears. AFM results show that annealing leads to the increase in surface roughness. Combined with UV-Vis and SE measurements, red shift in band gap has been observed as a function of annealing temperature. Additionally, increase in optical constant has been confirmed by SE based on Cauchy-Urbach model.
Annealing Effects on Conductivity and Microwave Dielectric Loss of Mgtio3 Ceramics

Hong Zhu,Xiao-Jun Kuang,Chun-Hai Wang,Hai-Ting Xia,Lei Li,Peng Hu,Xi-Ping Jing,Zong-Xi Tang,Fei Zhao,Zhen-Xin Yue

DOI: https://doi.org/10.1143/jjap.50.065806

IF: 1.5

2011-01-01

Japanese Journal of Applied Physics

Abstract:MgTiO3ceramics were annealed in various atmospheres of air, O2and N2at a low temperature of 800 °C and the influences of annealing on the conductivity and microwave dielectric loss were investigated. The conductivity variation with the annealing atmosphere is consistent with the defect equilibrium 2OO×↔2VO••+ O2↑+ 2e', indicating n-type conductance for MgTiO3. Annealing in air/O2is favorable for eliminating oxygen vacancies and electron defects and thus decreases the conductivity. The N2-annealing increases the contents of oxygen vacancies and electron defects as well as the conductivity. Annealing in air/O2/N2reduced the microwave dielectric loss irrespective of the contrary effects of air/O2-annealing and N2-annealing on the defects and conductivity, suggesting the frozen defects associated with the oxygen loss during the high-temperature sintering and the low-temperature N2-annealing have negligible effects on microwave dielectric loss. Other factors, such as the release of thermally induced strain, may be responsible for the reduction of microwave dielectric loss due to the low-temperature annealing in air/O2/N2.
Pressure Induced Dielectric Constant Suppression In Cacu3ti4o12 Ceramics

AIPING CHEN,WEI LI,XIAOMEI LU,JINSONG ZHU

DOI: https://doi.org/10.1080/10584580500414036

2005-01-01

Integrated Ferroelectrics

Abstract:High-dielectric-constant CaCu 3 Ti 4 O 12 (CCTO) ceramics were prepared using the conventional solid-state reaction method. The cubic perovskite structures were characterized using X-ray diffraction. The low frequency dielectric constants of these compounds are above 10,000 and keep constant in a wide temperature range. The origin of the larger dielectric constant is not fully understood, but many researchers attributed it to the internal barrier layer capacitance (IBLC) effect and the high dielectric constant in CCTO single crystal is attributed to the contribution of twin boundaries. In this letter, two sheets of CCTO ceramics were annealed under 1050 degrees C for 10 min. A large pressure was applied on one of the two samples. The dielectric constants of the two annealed samples were greatly suppressed compared with the as-prepared one. We contribute this suppression to the loss of Cu contents and the reorientation of twin boundaries in CCTO ceramics. Our result confirms that the giant dielectric constant of CCTO is related with the IBLC effect.
The effect of an annealing process on atomic layer deposited TiO2thin films

Byunguk Kim,Taeseong Kang,Gucheol Lee,Hyeongtag Jeon

DOI: https://doi.org/10.1088/1361-6528/ac2f28

IF: 3.5

2021-11-05

Nanotechnology

Abstract:In this paper, we study the property changes in TiO2thin films related to annealing under various conditions. XPS analysis showed that the concentration of oxygen vacancies in TiO2thin films was reduced by annealing. In the case of annealing in an O2and air atmosphere, the oxygen vacancy concentration was reduced to the greatest extent as oxygen diffused into the TiO2thin film and rearrangement of atoms occurred. XRD analysis showed that the anatase structure of annealed TiO2thin films was clearly present compared to the as-deposited TiO2thin film.I-Vanalysis showed that the lower the concentration of oxygen vacancy, the lower the leakage current (O2annealed TiO2: 10-4A cm-2) than as dep TiO2thin film (∼10-1A cm-2). The dielectric constant of annealed TiO2thin films was 26-30 which was higher than the as-deposited TiO2thin film (k ∼ 18) because the anatase structure became more apparent.
Impedance spectroscopy study on post-annealing-tuned polycrystalline CaCu3Ti4O12 films: Evidence of Barrier Layer Capacitor Effects

Liang Fang,Mingrong Shen,Zhenya Li,Wenwu Cao

DOI: https://doi.org/10.48550/arXiv.cond-mat/0408275

2004-10-09

Abstract:In this paper, impedance spectroscopy study was performed to establish the electrical property and microstructure relations of the as-deposited and post-annealed polycrystalline CCTO films prepared on Pt/Ti/SiO2/Si (100) substrates by pulsed-laser deposition (PLD). Our results demonstrated that the as-deposited polycrystalline CCTO film was made of insulating grain boundaries with semiconducting grains, indicating that the high-dielectric-constant is attributed to the barrier layer capacitor (BLC) effects. The simple resistor-capacitor (RC) equivalent circuit and the modified constant phase element (CPE) circuit were used to describe the impedance spectroscopy, and excellent agreement between the calculated and measured curves was obtained in the CPE circuit. The resistance and capacitance of the grains and grain boundaries can be tuned by changing the annealing atmosphere and temperature. Under oxygen-absent annealing atmosphere, the electric resistances of the grain boundaries changed greatly but the resistance of the grains has almost no change. While under oxygen annealing atmosphere, the reverse happened. On the basis of this result, it is demonstrated that the origin of the semiconductivity of the grains in CCTO polycrystalline films arises from their oxygen-loss, while the grain boundaries are close to oxygen- stoicheometry.

Materials Science
Chemical and mechanical strains tuned dielectric properties in Zr-doped CaCu3Ti4O12 highly epitaxial thin films

min gao,daquan feng,guoliang yao,ye zhang,c l chen,yin lin

DOI: https://doi.org/10.1039/c5ra18149f

IF: 4.036

2015-01-01

RSC Advances

Abstract:The nature of strain tuned dielectric properties in CaCu3Ti4O12 (CCTO) films was systematically studied with chemical strain (various doping rates) and physical strain ( different oxygen pressure treatments). Microstructural characterization revealed that the lattice parameters of the highly epitaxial CCTO thin films are strongly dependent upon both Zr doping rates and annealing oxygen pressures. Dielectric property measurements indicate that the dielectric loss can be tuned by optimizing the doping rate and annealing oxygen pressure. These findings indicate that the dielectric properties of CCTO can be manipulated by the in-plane strain achieved from either chemical or physical treatment.
Oxygen-vacancy-related Dielectric Anomaly Incacu3ti4o12: Post-sintering Annealing Studies

C. C. Wang,L. W. Zhang

DOI: https://doi.org/10.1103/physrevb.74.024106

2006-01-01

Abstract:The influence of post-sintering annealing on the dielectric properties of CaCu3Ti4O12 was investigated in the temperature range form 200 to 400 K. A dielectric peak featuring thermally activated Debye-like behavior was observed around 340 K (100 Hz). This peak can be eliminated by annealing in oxidizing atmosphere and created by annealing in reducing atmosphere. The dielectric peak was explained in terms of the combinational contributions from the n- and p-type carriers.
Effects of annealing temperature on the structural, morphology, optical properties and resistivity of sputtered CCTO thin film

Mohsen Ahmadipour,Mohd Fadzil Ain,Zainal Arifin Ahmad

DOI: https://doi.org/10.1007/s10854-017-7067-3

2017-05-09

Abstract:CaCu3Ti4O12 (CCTO) thin films with a thickness of 200 nm were deposited on ITO substrates by RF magnetron sputtering using a pure CCTO target. After the deposition, thin films were annealed at 400, 450, 500 and 550 °C, respectively, for 1 h. The effects of annealing temperature on the structural, surface morphology, optical properties and resistivity of (CCTO) thin films were investigated. The X-ray diffractometer results show that the thin films are polycrystalline in nature and are assigned to body-centered cubic perovskite configuration with a space group of Im-3. The intensity of the peaks and crystallinity gradually increased with the increase in annealing temperature. Microstructural investigation through FESEM showed that the grain size increased with increase in annealing temperature from 32 to 85 nm. The root mean square and roughness (Ra) were also enhanced with higher annealing temperatures, from 3.8 to 6.2 nm and from 4.7 to 7.7 nm, respectively, as confirmed by AFM. Increase in annealing temperature also affected the optical transmittance values which decreased to almost 60% at the visible range (550–850), as well as the optical energy band gap which decreased from 3.86 to 3.39 eV. The relevance between resistance behaviors and film microstructure is discussed. Therefore, it can be concluded that the desirable crystallinity, surface roughness, energy band gap and resistivity for 200 nm thick CCTO thin films deposited by RF magnetron sputtering can be achieved through the annealing process.

engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied
Epitaxial Growth of Dielectric Cacu3ti4o12 Thin Films on (001) Laalo3 by Pulsed Laser Deposition

Y Lin,YB Chen,T Garret,SW Liu,CL Chen,L Chen,RP Bontchev,A Jacobson,JC Jiang,EI Meletis,J Horwitz,HD Wu

DOI: https://doi.org/10.1063/1.1490624

IF: 4

2002-01-01

Applied Physics Letters

Abstract:High dielectric CaCu3Ti4O12 (CCTO) thin films were epitaxially grown on (001) LaAlO3 (LAO) substrates by pulsed laser deposition. Microstructural studies by x-ray diffraction, pole figure measurements, and transmission electron microscopy show that the as-grown films are good single crystalline quality with an interface relationship of (001)CCTO//(001)LAO and [100]CCTO//[100]LAO. Dielectric property measurements show that the films have an extremely high dielectric constant with value of 10 000 at 1 MHz at room temperature. It is interesting to note that the twinned substrate results in the formation of twinning or dislocations inside the CCTO film.
Effect of TeO2 addition on the dielectric properties of CaCu3Ti4O12 ceramics derived from the oxalate precursor route

P. Thomas,K. B. R. Varma,P.Thomas,K.B.R.Varma

DOI: https://doi.org/10.48550/arXiv.1301.4756

2013-01-21

Materials Science

Abstract:CaCu3Ti4O12 (CCTO) ceramics which has perovskite structure gained considerable attention due to its giant permittivity. But, it has high tan {\delta} (0.1 at 1kHz) at room temperature, which needs to be minimised to the level of practical applications. Hence, TeO2 which is a good glass former has been deliberately added to CCTO nano ceramic (derived from the oxalate precursor route) to explore the possibility of reducing the dielectric loss while maintaining the high permittivity. The structural, morphological and dielectric properties of the pure CCTO and TeO2 added ceramics were studied using X-ray diffraction, Scanning Electron Microscope along with Energy Dispersive X-ray Analysis (EDX), spectroscopy and Impedance analyzer. For the 2.0 wt % TeO2 added ceramics, there is a remarkable difference in the microstructural features as compared to that of pure CCTO ceramics. This sample exhibited permittivity values as high as 7387 @ 10 KHz and low dielectric loss value of 0.037 @ 10 kHz, which can be exploited for the high frequency capacitors application.
Decrease of Dielectric Loss in CaCu3Ti4O12 Ceramics by La Doping

LX Feng,XM Tang,YY Yan,XZ Chen,ZK Jiao,GH Cao

DOI: https://doi.org/10.1002/pssa.200622038

2006-01-01

physica status solidi (a)

Abstract:We have developed a novel route to reduce the dielectric loss of CaCu3Ti4O12 (CCTO) material based on the internal-barrier-layer-capacitance (IBLC) model. By the partial La-for-Ca substitution the dielectric loss was suppressed remarkably while the giant dielectric constant still remains. The sample of Ca0.8La0.2Cu3Ti4O12 exhibits a high dielectric constant over 3000 and a low dissipation factor below 0.015 at 10 kHz from 180 K to 300 K. The impedance spectroscopy analysis confirms that the decrease of dielectric loss is mainly due to the increase of conductivity in the CCTO grain/subgrain. Our result is expected to be able to promote practical applications. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
High Dielectric Permittivity and Low Dielectric Loss in Sol–gel Derived Zn Doped CaCu3Ti4O12 Thin Films

Dong Xu,Kai He,Renhong Yu,Xiujuan Sun,Yongtao Yang,Hongxing Xu,Hongming Yuan,Jing Ma

DOI: https://doi.org/10.1016/j.matchemphys.2015.01.007

IF: 4.778

2015-01-01

Materials Chemistry and Physics

Abstract:Zn-doped CaCu3-xZnxTi4O12 high dielectric films with low dielectric loss were prepared by the sol-gel method; their crystalline structure, microstructure and electrical properties were investigated. A new method, XRD complemented by CLSM, was used to prove the presence of ZnO in CCZTO films, indicating the existence of the Cu2+ vacancy which influenced the electrical properties directly. The average grain size enlarged with the increased Zn doping amounts. All the samples showed strong non-ohmic properties. Higher nonlinear coefficient and lower leakage current depended on the increased V-cu '' concentration. It is significant that the Zn doping effectively reduced the dielectric loss in the low and medium frequency region even though the Zn doping led to the dielectric constant decreased compared to the pure CCTO film. At x = 0.20, the minimum dielectric loss of 0.015 can be observed around 22 000 Hz, which is the best-reported value in CCTO-based material. (C) 2015 Elsevier B.V. All rights reserved.
Study on Annealing Effect of Ti-doped Gd2O3 Films for High K Dielectrics

Shuan Li,Daogao Wu,Shuang Wang,Hongbo Yang,Xingguo Li

DOI: https://doi.org/10.1088/1742-6596/2713/1/012061

2024-01-01

Journal of Physics Conference Series

Abstract:Abstract Rare earth oxides and nitrogen oxides have drawn more and more focus as candidates for next-generation gate dielectrics in MOSFET. In this study, a Gd2O3 film doped with 3% Ti was fabricated through co-sputtering gadolinium and titanium targets in a diluted oxygen atmosphere. A systematic study was carried out to examine the annealing influence on the microstructure, surface roughness, band gap, and electrical properties of this film. Compared with as-deposited film, the annealed sample displays a smaller surface roughness (Ra=0.45 nm) and more excellent electrical performance. In terms of band gap analysis, as the annealing temperature rises from 400 to 700°C, the band gap has fallen from 4.70 eV to 4.63 eV, indicating a smaller value compared to the as-deposited sample (4.73 eV). As a result, the 600°C-annealed thin film shows the most outstanding performance with the largest k value of 23.9. Further, 600°C-annealed and as-deposited films were selected for impedance spectrum analysis and examination of the equivalent circuit. This work can offer a new insight to design novel rare earth oxides with high k dielectric and select the corresponding annealing process.
Effect of post-annealing on the structure and dielectric property of La2Ti2O7 thin film

Tao SHAO,Yuyin WANG,Yuanyuan LI,Mei YANG,Chuansheng HU,Zeming QI

DOI: https://doi.org/10.3969/j.issn.0253-2778.2017.08.010

2017-01-01

Journal of University of Science and Technology of China

Abstract:La2Ti2O7 thin films were grown on Si (100) substrates by using pulsed laser deposition method.The effect of post-annealing on the structural and dielectric properties of the films at different temperatures was studied by using X-ray diffraction,atomic force microscopy and synchrotron infrared transmission spectroscopy.The results show that the as-deposited thin film is amorphous and annealing thin film is crystallized into monoclinic structure.The infrared spectrum reveals that the annealing can significantly increase the dielectric constant.The asdeposited thin film has a low dielectric constant attributed to the loss of some phonon modes,especially the low frequency mode.This indicates post-annealing has an important influence on the dielectric property of La2Ti2O7 thin film.
Reducing optical loss of dual-ion beam sputtered HfO2 films via optimization of coating and annealing parameters

Chong Ma,Gang Chen,Junbo He,Shaobo Fang,Cheng Wang,Qingyuan Cai,Weibo Duan,Dingquan Liu,Rongjun Zhang

DOI: https://doi.org/10.1364/OE.505342

2023-12-04

Abstract:HfO2 films are widely used for optical coatings due to the high refractive index and low absorption, especially in the ultraviolet (UV) band. In this work, HfO2 film samples were prepared with the optimized assistant source power and deposition temperature by dual-ion beam sputtering (DIBS), followed by annealing treatments in vacuum and atmosphere, respectively. For samples with different annealing temperatures from 200 to 450 °C, the microstructure, morphology, film stress and optical properties from 200 to 1000 nm were systematically investigated. A monoclinic phase, a refractive index inhomogeneity along the film thickness and an absorption of shoulder-shape in the 250-300 nm band were found in the as-deposited samples. For samples annealed in vacuum, 400 °C annealing leaded to more oxygen defects, which in turn caused aggravated UV absorption. For samples annealed in atmosphere, the shoulder-shaped absorption weakened obviously above 300 °C annealing, which was suspected due to the reduction of oxygen defects during the crystallization process with sufficient oxygen. Scattering loss was investigated and found negligible for as-deposited and annealed samples. Additionally, film stress varied from compressive state to tensile state with increasing annealing temperature, and the zero-stress temperature is between 300-350 °C, which is due to the obvious crystallization behavior. Production methods and physical mechanisms for low absorption and scattering loss DIBS deposited HfO2 films were proposed and discussed in detail.
Optical Properties of High-Dielectric-constant CaCu3Ti4O12 Films

AP Litvinchuk,CL Chen,N Kolev,VN Popov,VG Hadjiev,MN Iliev,RP Bontchev,AJ Jacobson

DOI: https://doi.org/10.1002/pssa.200305930

2003-01-01

Abstract:CaCu3Ti4O12 (CCTO) films, prepared by pulse laser deposition, are characterized by X-ray diffraction, Raman scattering, and infrared reflection spectroscopy. Similarly to CCTO bulk materials, the films are found to exhibit a room temperature dielectric constant as high as 10000 at microwave frequencies. Temperature-dependent Raman scattering data across the temperature T* approximate to 100 K, below which a gradual decrease of the dielectric constant occurs, do not indicate any lattice anomalies for the film. The effect of fine film twinning on their optical properties is discussed.
The Effect of TiO2 on the Dielectric Performance of ZrO2 and Nb2O5 Pre-Doped CaCu3Ti4O12 Ceramics

Guoyu Zhang,Lu Li,Yanxin Nan,Peng Li,Tao Deng,Zhipeng Lei,Yuanyuan Li,Jianhua Zhang

DOI: https://doi.org/10.3390/ma17235824

IF: 3.4

2024-11-28

Materials

Abstract:In this work, the effects of different sintering temperatures and TiO2 concentrations on the dielectric properties of ZrO2 and Nb2O5 pre-doped CaCu3Ti4O12 (CCTO) ceramics were investigated. These doped ceramics were sintered at temperatures of 1020, 1030, and 1040 °C, exhibiting the lowest dielectric loss of 0.01, which consistently remained below 0.03 across a wide frequency range from 10 to 105 Hz. Simultaneously, they maintained a high dielectric constant of more than 3000 and remarkably met the requirements for an X8P capacitor (Δε′ ≤ ±10% at temperature range from −55 to 150 °C). It was clarified that TiO2 doping increased grain boundary resistance, leading to the reduced dielectric loss, and elevated the grain boundary activation energy, thereby enhancing the temperature stability. The TiO2-doped CCTO-based ceramics also demonstrated reduced sensitivity to variations in sintering temperature, highlighting their excellent manufacturability. This characteristic holds great promise for the fabrication of CCTO-based ceramics, which usually exhibit poor repetitiveness.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,metallurgy & metallurgical engineering
Thickness-induced Insufficient Oxygen Reduction in La2−xCexCuO4 ± Δthin Films

B. X. Wu,K. Jin,J. Yuan,H. B. Wang,T. Hatano,B. R. Zhao,B. Y. Zhu

DOI: https://doi.org/10.1088/0953-2048/22/8/085004

2009-01-01

Superconductor Science and Technology

Abstract:A series of electron-doped cuprate La(2-x)CexCuO4 thin films with different thicknesses have been fabricated and their annealing time are adjusted carefully to ensure the highest superconducting transition temperature. The transport measurements indicate that, with the increase of the film thickness (<100 nm), the residual resistivity increases and the Hall coefficient shifts in the negative direction. Further more, the X-ray diffraction data reveal that the c-axis lattice constant c0 increases with the decrease of film thickness. These abnormal phenomena can be attributed to the insufficient oxygen reduction in the thin films. Considering the lattice mismatching in the ab-plane between the SrTiO3 substrates and the films, the compressive stress from the substrates may be responsible for the more difficult reduction of the oxygen in the thin films.
Thermal Stability And Electrical Properties Of Titanium-Aluminum Oxide Ultrathin Films As High-K Gate Dielectric Materials

li shi,y d xia,bo xu,jin yin,z g liu

DOI: https://doi.org/10.1063/1.2432401

IF: 2.877

2007-01-01

Journal of Applied Physics

Abstract:As potential high-k gate dielectric material for metal-oxide-semiconductor field effect transistor, the TiO2 incorporated Al2O3 [(TiO2)(x)(Al2O3)(1-x) (TAO)] films have been prepared by pulsed laser deposition. The thermal stability and electrical properties of the TAO films annealed at different temperatures have been systematically investigated by x-ray photoelectron spectroscopy, high-resolution transmission electron microscopy, and capacitance-voltage measurements. These results show that the TAO films keep amorphous state after annealed at 900 degrees C, and the interfacial reaction between the TAO film and silicon substrate is closely related to the deposition and postannealing temperatures. The dielectric constant of the film is about 30. For a 5 nm TAO film after annealed at 400 degrees C, the thickness between interfacial layer and the silicon substrate is only two atomic layers (about 0.6 nm) and a small equivalent oxide thickness (1.2 nm) is achieved. A possible explanation for interfacial interaction has been proposed. By virtue of the leakage behaviors, Schottky emission is considered as the leakage mechanism of the TAO films. The advantages and disadvantages of the high-k gate dielectric material for future metal-oxide-semiconductor transistors have been discussed, which are useful for future practical application. (c) 2007 American Institute of Physics.
A novel route to lower the dielectric loss in CaCu$_{3}$Ti$_{4}$O$_{12}$ ceramics

Lixin Feng,Xiaoming Tang,Yueyue Yan,Xuezhi Chen,Zhengkuan Jiao,Guanghan Cao

DOI: https://doi.org/10.1002/pssa200622038

2005-11-29

Abstract:Based upon a widely-accepted internal-barrier-layer-capacitance (IBLC) model, the dielectric loss in the giant-dielectric-constant CaCu$_{3}$Ti$_{4}$O$_{12}$ (CCTO) material is expected to decrease as the conductivity of the CCTO grains/subgrains increases. In this letter, we report that this idea was successfully realized through the La-for-Ca substitution in the CCTO ceramics. The impedance spectroscopy analysis gives the evidence.

Materials Science

Reducing Dielectric Loss in CaCu3Ti4O12 Thin Films by High-Pressure Oxygen Annealing

Annealing Temperature Dependent Microstructure and Optical Properties of HfxTi1-xO2 Thin Films

Annealing Effects on Conductivity and Microwave Dielectric Loss of Mgtio3 Ceramics

Pressure Induced Dielectric Constant Suppression In Cacu3ti4o12 Ceramics

The effect of an annealing process on atomic layer deposited TiO2thin films

Impedance spectroscopy study on post-annealing-tuned polycrystalline CaCu3Ti4O12 films: Evidence of Barrier Layer Capacitor Effects

Chemical and mechanical strains tuned dielectric properties in Zr-doped CaCu3Ti4O12 highly epitaxial thin films

Oxygen-vacancy-related Dielectric Anomaly Incacu3ti4o12: Post-sintering Annealing Studies

Effects of annealing temperature on the structural, morphology, optical properties and resistivity of sputtered CCTO thin film

Epitaxial Growth of Dielectric Cacu3ti4o12 Thin Films on (001) Laalo3 by Pulsed Laser Deposition

Effect of TeO2 addition on the dielectric properties of CaCu3Ti4O12 ceramics derived from the oxalate precursor route

Decrease of Dielectric Loss in CaCu3Ti4O12 Ceramics by La Doping

High Dielectric Permittivity and Low Dielectric Loss in Sol–gel Derived Zn Doped CaCu3Ti4O12 Thin Films

Study on Annealing Effect of Ti-doped Gd2O3 Films for High K Dielectrics

Effect of post-annealing on the structure and dielectric property of La2Ti2O7 thin film

Reducing optical loss of dual-ion beam sputtered HfO2 films via optimization of coating and annealing parameters

Optical Properties of High-Dielectric-constant CaCu3Ti4O12 Films

The Effect of TiO2 on the Dielectric Performance of ZrO2 and Nb2O5 Pre-Doped CaCu3Ti4O12 Ceramics

Thickness-induced Insufficient Oxygen Reduction in La2−xCexCuO4 ± Δthin Films

Thermal Stability And Electrical Properties Of Titanium-Aluminum Oxide Ultrathin Films As High-K Gate Dielectric Materials

A novel route to lower the dielectric loss in CaCu$_{3}$Ti$_{4}$O$_{12}$ ceramics