Electrostatically actuated silicon-based nanomechanical switch at room temperature

Diego N. Guerra,Matthias Imboden,Pritiraj Mohanty
DOI: https://doi.org/10.1063/1.2964196
2009-03-14
Abstract:We demonstrate a silicon-based high frequency nanomechanical device capable of switching controllably between two states at room temperature. The device uses a nanomechanical resonator with two distinct states in the hysteretic nonlinear regime. In contrast to prior work, we demonstrate room temperature electrostatic actuation and sensing of the switching device with 100% fidelity by phase modulating the drive signal. This phase-modulated device can be used as a low-power high-speed mechanical switch integrated on-chip with silicon circuitry.
Mesoscale and Nanoscale Physics,Materials Science
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