Mengqi Fu,Bojan Bošnjak,Zhan Shi,Jannik Dornseiff,Robert H. Blick,Elke Scheer,Fan Yang
Abstract:Integration of 2D materials in nanoelectromechanical systems (NEMS) marries the robustness of silicon-based materials with exceptional electrical controllability in 2D materials, drastically enhancing system performance which now is the key for many advanced applications in nanotechnology. Here, we experimentally demonstrate and theoretically analyze a powerful on-chip graphene integrated NEMS device consisting of a hybrid graphene/silicon-nitride membrane with metallic leads that enables an extremely large static and dynamic parameter regulation. When a static voltage is applied to the leads, the force induced by the thermal expansion difference between the leads and the membrane results in ultra-wide frequency tuning, deformation (post-buckling transition) and regulation of mechanical properties. Moreover, by injecting an alternating voltage to the leads, we can excite the resonator vibrating even far beyond its linear regime without a complex and space consuming actuation system. Our results prove that the device is a compact integrated system possessing mechanical robustness, high controllability, and fast response. It not only expands the limit of the application range of NEMS devices but also pushes multidimensional nanomechanical resonators into working in the nonlinear regime.
What problem does this paper attempt to address?
The problem that this paper attempts to solve is: How to design a new type of nano - electromechanical system (NEMS) by combining the advantages of two - dimensional materials (such as graphene) and silicon - based materials (such as silicon nitride) to achieve a wide - range regulation of mechanical properties (such as natural frequency, nonlinear behavior, vibration mode, etc.). Specifically, the researchers developed an NEMS device based on a metal - graphene - silicon nitride (MGS) hybrid structure and utilized the electro - thermo - mechanical (ETM) effect to achieve this goal.
### Main Problems and Solutions
1. **Mechanical Property Regulation**
- **Static Deformation Control**: By applying a direct - current voltage ($V_{DC}$), using the difference in the coefficient of thermal expansion between different materials, the static deformation of the device and the regulation of mechanical properties can be achieved. For example, when the applied voltage exceeds a certain threshold, the device will undergo a buckling transition, resulting in a significant break in spatial symmetry.
- **Dynamic Property Regulation**: By applying an alternating - current voltage ($V_{AC}$), the vibration of the membrane resonator can be driven without using an external excitation, and it can even be made to enter the nonlinear region. This enables the device to adjust its natural frequency and other dynamic properties within a wide range.
2. **Multifunctionality and Integration Degree**
- Traditional NEMS devices usually require complex structures (such as capacitive gates or comb - like structures) for adjustment, and the design and manufacturing processes of these structures are complex and occupy a large amount of space. In contrast, the MGS structure can achieve a wide range of functional regulation through simple electrical inputs, and has a higher degree of integration and flexibility.
3. **Application Prospects**
- This device can not only expand the application range of NEMS, but also achieve a nonlinear working mode in multi - dimensional nano - mechanical resonators, which is of great significance for advanced sensing, actuating, and filtering applications. In addition, it can also be used in fields such as temperature drift compensation and nonlinear behavior control.
### Key Formulas and Models
- **Temperature Distribution**
\[
T = T_0+\frac{L_MP_M}{\kappa W_Mh_M}
\]
where $T_0$ is the initial temperature, $L_M$, $W_M$, and $h_M$ are the length, width, and thickness of the metal lead respectively, $\kappa$ is the thermal conductivity of the metal lead, and $P_M$ is the power load applied to the structure.
- **Radius of Curvature**
\[
r_c=\frac{(h_M + h_{SiN})[3(1 + h')^2+(1 + h'E')(h'^2 + 1/h'E')]}{6\varepsilon(T - T_0)-\sigma_{SiN}/E_{SiN}(1 + h')^2}
\]
where $h'=h_M/h_{SiN}$, $E' = E_M/E_{SiN}$, $\varepsilon=\alpha_M-\alpha_{SiN}$, and $\sigma_{SiN}$ is the residual stress of silicon nitride.
Through these methods, the researchers have successfully demonstrated the mechanical property regulation ability of MGS devices in a wide range, providing new ideas and tools for the future development of nanotechnology.