Large‐area MoOx/c‐Si heterojunction solar cells with a ICO/Ag back reflector

Xu Wang,Bowen Ding,Yurong Zhou,Dongming Zhao,Fanying Meng,Hui Yan,Rui Life,Haiwei Huang,Zhidan Hao,Yuqin Zhou,Fengzhen Liu
DOI: https://doi.org/10.1002/pip.3796
2024-03-06
Progress in Photovoltaics Research and Applications
Abstract:A power conversion efficiency of 21.59% is achieved on the SCH solar cell with the device area of 274.15 cm2. The back reflector of a ICO/Ag stack is beneficial for increasing the short‐circuit current density, reducing the contact resistance, and improving the device stability. Compound/silicon heterojunction (SCH) solar cells have been widely studied because of the low parasitic absorption of the window layer, high short‐circuit current, and simple preparation process. So far, most reported SCH solar cells are small‐area devices. By depositing MoOx hole transport layer using hot‐wire oxidation–sublimation deposition technique and employing a front‐contact back‐junction cell architecture, the large‐area SCH solar cells are successfully fabricated on M6 (166 mm) n‐type silicon wafers. Indium cerium oxide (ICO) film with the optimal thickness of about 110 nm is inserted between MoOx and Ag. The ICO/Ag stack functions well as a back reflector and is beneficial for increasing the short‐circuit current density, reducing the contact resistance, and improving the device stability. A power conversion efficiency of 21.59% is achieved on the champion SCH solar cell with the device area of 274.15 cm2.
materials science, multidisciplinary,physics, applied,energy & fuels
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