High-performance N-Mos2/i-sio2/p-si Heterojunction Solar Cells.

Lanzhong Hao,Wei Gao,Y. J. Liu,Zhongying Han,Qingzhong Xue,Wenyue Guo,Jing Zhu,Yazhen LI
DOI: https://doi.org/10.1039/c5nr01275a
IF: 6.7
2015-01-01
Nanoscale
Abstract:A solar cell based on the n-MoS2/i-SiO2/p-Si heterojunction is fabricated. The device exhibits a high power-conversion efficiency of 4.5% due to the incorporation of a nano-scale SiO2 buffer into the MoS2/Si interface. The present device architectures are envisaged as potentially valuable candidates for high-performance photovoltaic devices.
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