Scalable Production of P-Mote2/n-mos2 Heterostructure Array and Its Application for Self-Powered Photodetectors and CMOS Inverters

Xinyu Chen,Honglei Chen,Yangye Sun,Simeng Zhang,Yin Xia,David Wei Zhang,Peng Zhou,Wenwu Li,Zhengzong Sun,Wenzhong Bao

DOI: https://doi.org/10.1088/2053-1583/ac7055

IF: 6.861

2022-01-01

2D Materials

Abstract:Recent advances in van der Waals heterostructures have extensively promoted the development of new-generation electronic devices. However, the normally utilized mechanical exfoliation method for preparing two-dimensional semiconductors is not scalable for circuit-level application. Herein, the fabrication and characterization of wafer-scale heterostructure arrays composed of multilayer 2H-MoTe 2 and single-layer 2H-MoS 2 are demonstrated. Owing to the type-II band alignment facilitating efficient electron–hole separation, the devices fabricated by the p-MoTe 2 /n-MoS 2 heterostructure exhibit an excellent gate-tunable PN diode behavior, with a rectification ratio of over 10 3 and a self-powered photocurrent with a remarkable on–off ratio of ∼10 3 at a zero bias voltage. Complementary inverter arrays based on p-MoTe 2 /n-MoS 2 are also demonstrated. The scalable production of p–n junction devices and complementary inverters paves the way for future integrated platforms in photoelectric detection and logic computation.