Fabrication of p-MoTe2/n-MoS2 heterostructure and its electrical characterization

Xinyu Chen,Yangye Sun,Ling Tong,Simeng Zhang,Xiaoxi Li,Jingyi Ma,Xiaojiao Guo,Minxing Zhang,Zhengzong Sun,Wenzhong Bao

DOI: https://doi.org/10.1109/EDTM50988.2021.9420815

2021-01-01

Abstract:We demonstrate the fabrication and characterization of large-area van der Waals heterostructure array composed of chemical vapor deposition (CVD) grown multilayer (ML) 2H-MoTe2 and single-layer (SL) 2H-MoS2, which exhibits excellent rectifier properties. The transfer characteristics of field-effect transistors (FETs) are also investigated. Our work acquires excellent homogeneity and device perform...