Design of a High Efficiency p-Si Based Heterojunction Solar Cell with ln2S3 Window and NiO BSF Layers

Nusrat Jahan Konok,Shaikh Khaled Mostaque,Jaker Hossain

DOI: https://doi.org/10.1007/s12633-024-02940-x

IF: 3.4

2024-03-08

Silicon

Abstract:The numerical evaluation performed on the design of n-ln 2 S 3 /p-Si/p + -NiO solar cell reveals that it can come up with a high efficiency gain along with substantial values in other photovoltaic parameters. The pristine n-ln 2 S 3 /p-Si structure imparts a power conversion efficiency, PCE of 23.24%. The selection of NiO in back surface field (BSF) layer makes an improvement of ~ 0.1 V in open circuit voltage, V OC and a slight improvement in short circuit current density, J SC . Under single sun and AM 1.5G spectrum, the optimum thickness (Window = 0.2 μm, Base = 350 μm, BSF = 0.2 μm), doping concentration (Window donor = 1.0 × 10 18 cm −3 , Base acceptor = 1.0 × 10 17 cm −3 , BSF acceptor = 1.0 × 10 20 cm −3 ) and defect density (Window = 1.0 × 10 14 cm −3 , Base = 1.0 × 10 12 cm −3 , BSF = 1.0 × 10 14 cm −3 ) provide an enhanced PCE of 26.74% with the application of NiO as BSF in the pristine structure. The other photovoltaic parameters results with V OC = 0.79 V, J SC = 40.37 mA/cm 2 and FF = 83.85%. Insertion of a thin and optimized NiO reduces recombination at the back surface by a potential barrier that enhances V OC and current in the device. Such a cost-effective solar cell exhibits enough possibility of fabricating a highly efficient, reliable and promising performance device.

materials science, multidisciplinary,chemistry, physical