An Insight Analysis of In0.7Ga0.3N Based pn Homo-Junction Solar Cell using SCAPS-1D Simulation Software

Arman Rahman,Emran Hossain,Sakhawat Hussain
DOI: https://doi.org/10.3103/s0003701x23600522
2024-03-25
Applied Solar Energy (English translation of Geliotekhnika)
Abstract:An insight analysis of In 0.7 Ga 0.3 N based pn homo-junction solar cell structure has been carried out using simulation software. A novel solar cell structure of n + buffer contact layer/ n window layer/ p absorber layer/ p + back absorber layer has been proposed after device optimization. We have found that under the sun spectrum of AM 1.5 of 1 KW/m 2 operating at 300 K, the solar cell with low series resistance of 3 Ω cm 2 , highly doped (1×10 19 cm –3 ) n + layer as buffer contact layer and p + layer of 200 nm thick as back absorber layer on top of back metal contact, enable us to achieve an efficient solar cell. We found that doping concentration of in both active n and p layer, with 30 nm and 1.0 of thickness, respectively, would allow us to achieve short circuit current density of , open circuit voltage of 1.0 V, overall efficiency of 28.32% and fill factor value of 80% from the solar cell. If we could further reduce the series resistance of In 0.7 Ga 0.3 N pn homo-junction solar cell to ideal one, it may allow us to have even higher overall efficiency and fill factor values of 31 and 86%, respectively.
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