Abstract:Choosing the Indium Gallium Nitride (InGaN) ternary alloy for thin films solar cells might yield high benefits concerning efficiency and reliability, because its bandgap can be tuned through the Indium composition and radiations have little destructive effect on it. It may also reveal challenges because good quality p-doped InGaN layers are difficult to elaborate. In this letter, a new design for an InGaN thin film solar cell is optimized, where the player of a PIN structure is replaced by a Schottky contact, leading to a Metal-IN (MIN) structure. With a simulated efficiency of 19.8%, the MIN structure performs better than the previously studied Schottky structure, while increasing its fabrication tolerance and thus functional reliability a. Owing to its good tolerance to radiations [1], its high light absorption [2, 3] and its Indium-composition-tuned bandgap [4, 5], the Indium Gallium Nitride (InGaN) ternary alloy is a good candidate for high-efficiency-high-reliability solar cells able to operate in harsh environments. Unfortunately, InGaN p-doping is still a challenge, owing to InGaN residual n-doping [6], the lack of dedicated ac-ceptors [7] and the complex fabrication process itself [8, 9]. To these drawbacks can be added the uneasy fabrication of ohmic contacts [4] and the difficulty to grow the high-quality-high-Indium-content thin films [10] which would be needed to cover the whole solar spectrum. These drawbacks still prevent InGaN solar cells to be competitive with other well established III-V and silicon technologies [11]. In this letter, is proposed a new Metal-IN (MIN) InGaN solar cell structure where the InGaN p-doped layer is removed and replaced by a Schottky contact, lifting one of the above mentioned drawbacks. A set of realistic physical models based on actual measurements is used to simulate and optimize its behavior and performance using mathematically rigorous multi-criteria optimization methods, aiming to show that both efficiency and fabrication tolerances are better than the previously described simple InGaN Schottky solar cell [12].

TCAD based performance assessment of Indium Gallium Nitride based single junction solar cells for different mole fractions of Indium

Investigation on indium concentration in two-terminal tandem indium gallium nitride solar cells by SCAPS-1D

Optimization of nonhomogeneous indium-gallium-nitride Schottky-barrier thin-film solar cells

Numerical simulation of highly photovoltaic efficiency of InGaN based solar cells with ZnO as window layer

Quantum Efficiency and Temperature Coefficients of Gainp/Gaas Dual-Junction Solar Cell

Numerical simulation of InGaN Schottky solar cell

High-efficiency InP-based Multijunction Solar Cells

III-Nitride/Si Tandem Solar Cell for High Spectral Response: Key Attributes of Auto-tunneling Mechanisms

High efficient step graded Inx Ga1−x N/GaN superlattice solar cell

An Insight Analysis of In0.7Ga0.3N Based pn Homo-Junction Solar Cell using SCAPS-1D Simulation Software

Bilayer CIGS-based solar cell device for enhanced performance: a numerical approach

Numerical Analysis of InGaN/GaN Intermediate Band Solar Cells Under X-sun Concentration, In-compositions, and Doping: Unlocking the Potential of Concentrated Photovoltaics

Improving the efficiency of a GaInP solar cell using an AlGaAs buffer layer by optimizing the thicknesses of the PN junction

Design and optimization of two-terminal InGaP/Si tandem solar cell through numerical simulation

Theoretical Calculation of Conversion Efficiency of InGaN Solar Cells

Theoretical Study on Potential Performance of Lattice-Matched Monolithic GaNP/GaNAsP/Si Triple-Junction Solar Cell

TOPcon route with quantum wells in GaInP/Si dual junction cell for efficiency enhancement

Influence of Piezoelectric Fields on InGaN Based Intermediate Band Solar Cells

InGaN Metal-IN Solar Cell: optimized efficiency and fabrication tolerance

Interface Engineering for High-Efficiency Solution-Processed Cu(In,Ga)(S,Se)2 Solar Cells via a Novel Indium-Doped CdS Strategy

An integrated GaInP/Si dual-junction solar cell with enhanced efficiency using TOPCon technology