Abstract:Developing high-performance & cheaper solar cells is one of the fundamental aims of the researchers to achieve an economical levelised price of energy. Through studies, it can be easily visualized that efficiency of silicon based solar cells have been constrained to 27% for many years. On the other side, III-V solar cells are gradually exhibiting performance advancement with an increment of almost 1% per year, with current recorded PCE of nearly 45%. Assimilation of these III-V solar cells on comparatively economical Silicon layer has stimulated massive curiosity towards forthcoming energy plans by coalescing the advantages of III-V constituents with inexpensive & largely available Silicon. This paper will elaborate recent evolvement of III-V cell deposition over Silicon layer. Further, fundamental design principles & the technical contentions w.r.t coalition of III-V solar cells on Silicon layer are also elaborated. Various methods for coalescing III-V solar cells over Si layer through heteroepitaxial coalition & by mechanical stacking technique are discussed. With reduction in cost of silicon solar cells, complemented with huge space existing for enhancing the III-V solar cell PCE, the forthcoming visions for efficacious coalition of III-V solar cell over Silicon layer seems highly favorable to begin an epoch of forthcoming generation of high PCE & cost effective solar cells. Additionally, Perovskite Solar Cells are the optimistic contender for next generation solar cell with high efficiency, low cost and easy to manufacture techniques. In this paper, existing perovskite solar cells consisting Cd1-xZnxS as ETL, MAPbI3-xClx as perovskite layer and CuI as HTL exhibiting PCE of 25.68% is compared with two different proposed perovskite solar cells containing similar ETLs and perovskite layers i.e. Cd1-xZnxS and MAPb(I1-xBrx)3 but different HTLs viz CuSbS2 and CuSCN. On comparing the three cells, proposed solar cell with CuSCN as HTL exhibited optimum PCE of 28.19%.

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