Abstract:The nucleation and structure of silicon nanocrystals formed by different preparation conditions and silicon concentration (28 - 70 area %) have been studied using Transmission Electron Microscopy (TEM), Energy Filtered TEM (EFTEM) and Secondary Ion Mass Spectroscopy (SIMS). The nanocrystals were formed after heat treatment at high temperature of a sputtered 10 nm thick silicon rich oxide on 3 nm SiO$_2$ layer made by Rapid Thermal Oxidation (RTO) of silicon. Nanocrystals precipitate when the excess silicon concentration exceeds 50 area %. Below this percentage amorphous silicon nanoclusters were found. In-situ heat treatment of the samples in the TEM showed that the crystallization requires a temperature above 800$^o$C. The nanocrystals precipitate in a 4 nm band, 5 nm from the Si substrate and 4 nm from the SiO$_2$ sample surface. The silicon nucleates where the excess Si concentration is the highest. The top surface has less excess Si due to reaction with oxygen from the ambient during annealing. The SiO$_2$-RTO layer is more Si rich due to Si diffusion from the SiO$_2$-Si layer into RTO. Twinning and stacking faults were found in nanocrystals with 4-10 nm in diameter. These types of defects may have large effects upon the usability of the material in electronic devices. Both single and double twin boundaries have been found in the nanocrystals by high resolution transmission electron microscopy (HRTEM). Image simulations were carried out in order to obtain more information about the defects and nanocrystals. The stacking faults are extrinsic and located in the twin boundaries.

Ten-nanometer surface intrusions in room temperature silicon

Defects Induced by P+-Implanted in Silicon

Evolution of secondary defects in arsenic implanted Si

Role of Nitrogen Related Complexes in the Formation of Defects in Silicon

Defects in nitrogen-doped multicrystalline silicon

J un 2 01 9 Ultraslow Dynamic Annealing of Neutron-induced Defects in n-type Silicon

Grown-in Defects in Heavily Phosphorus-Doped Czochralski Silicon

Defects Evolution in N-Type 4H-Sic Induced by Electron Irradiation and Annealing

Fast Diffusion Mechanism of Silicon Tri-interstitial Defects

Oxygen Precipitation in Nitrogen Doped Czochralski Silicon Wafers. I. Formation Mechanisms of Near-Surface and Bulk Defects

Characterization of the Interface Region During the Agglomeration of Silicon Nanocrystals in Silicon Dioxide

Scanning Infrared Microscopy Study of Thermal Processing Induced Defects in Low Resistivity Si Wafers

Transmission Electron Microscopy Investigation of the Micro-Defects in Czochralski Silicon

Electron Irradiation Induced Defects In Germanium-Doped Czochralski Silicon Substrates And Diodes

Characterization of amorphous and crystalline silicon nanoclusters in ultra thin silica layers

Defect Property in He+ Implanted Silicon Probed by Slow Positron Beam

Interfacial Defects Related to the Substrate Treatment in Molecular Beam Epitaxial Silicon

Nanoscale Experimental Study of A Micro-Crack in Silicon

Intrinsic point defects in crystalline silicon: Tight-binding molecular dynamics studiesof self-diffusion, interstitial-vacancy recombination, and formation volumes

Electrically Active Defects in Ni-Si Silicide Studied by Deep-Level Transient Spectroscopy

Vacancy-type Defects in Large-Dose Neutron-Irradiated Silicon Containing Hydrogen