Abstract:The sensitivity of semiconductor devices to any microscopic perturbation is increasing with the continuous shrinking of device technology. Even the small fluctuations have become more acute for highly scaled nano-devices. Therefore, these fluctuations need to be addressed extensively in order to continue further device scaling. In this paper, we mainly focus on three sources of intrinsic parameter fluctuation including the work function fluctuation (WKF), the random dopant fluctuation (RDF), and the interface trap fluctuation (ITF) for gate-all-around (GAA) silicon (Si) nanosheet (NS) MOSFETs. Generally, the effect of these fluctuations is analyzed using a time-consuming device simulation process. A machine learning (ML) based powerful and efficient artificial neural network (ANN) model is used to accelerate this process. Firstly, the effects of fluctuation sources are analyzed individually by using the ANN model and results have been presented that show the WKF variations dominate the variation of threshold voltage, off-state current, and on-state current among other fluctuation sources. Next, we examine the combined effect of three fluctuation sources. It is crucial because considering only one fluctuation can result in unexpected variations due to other fluctuations appearing in the device. Consequently, the ANN model is used to estimate the combined effects as well. The results show that the proposed model predicts the outputs with an R2-score of 99% and an error rate of less than 1%. In addition, the ML is also utilized to calculate the permutation importance of input variables as a measure to investigate the contribution of each fluctuation source.

Statistical 3D Device Simulation of Full Fluctuations of Gate-All-Around Silicon Nanosheet MOSFETs at Sub-3-nm Technology Nodes

A Unified Statistical Analysis of Comprehensive Fluctuations of Gate-All-Around Silicon Nanosheet MOSFETs Induced by RDF, ITF, and WKF Simultaneously

A unified 3D device simulation of random dopant, interface trap and work function fluctuations on high-к/metal gate device

Statistical Analysis of Intrinsic High-Frequency Characteristic Fluctuation of Emerging Silicon Gate-All-Around Nanosheet (NS) MOSFETs at Sub-3-nm Nodes

Statistical device simulation of characteristic fluctuation of 10-nm gate-all-around silicon nanowire MOSFETs induced by various discrete random dopants

On Statistical Variation of MOSFETs Induced by Random-Discrete-Dopants and Random-Interface-Traps

Statistical Analysis of Metal Gate Workfunction Variability, Process Variation, and Random Dopant Fluctuation in Nano-CMOS Circuits

Simulation of electrical characteristic fluctuation in 16-nm FinFETs' and circuits

3D simulation of electrical characteristic fluctuation induced by interface traps at Si/high-к oxide interface and random dopants in 16-nm-Gate CMOS devices

Electrical characteristic fluctuation of 16 nm MOSFETs induced by random dopants and interface traps

3D device simulation of work function and interface trap fluctuations on high-κ / metal gate devices

Process variation effect, metal-gate work-function fluctuation and random dopant fluctuation of 10-nm gate-all-around silicon nanowire MOSFET devices

Toward full fluctuation analysis of small FETs

A Machine Learning Approach to Modeling Intrinsic Parameter Fluctuation of Gate-All-Around Si Nanosheet MOSFETs

Simulation Study of Individual and Combined Sources of Intrinsic Parameter Fluctuations in Conventional Nano-MOSFETs

Three-Dimensional Statistical Simulation of Gate Leakage Fluctuations Due to Combined Interface Roughness and Random Dopants

Asymmetric characteristic fluctuation of undoped gate-all-around nanowire MOSFETs induced by random discrete dopants inside source/drain extensions

Statistical device simulation of intrinsic parameter fluctuation in 16-nm-gate n- and p-type Bulk FinFETs

A Nanosized-Metal-Grain Pattern-Dependent Model for Work-Function Fluctuation of Gate-All-Around Silicon Nanofin and Nanosheet MOSFETs

Process-Variation Effect, Metal-Gate Work-Function Fluctuation, and Random-Dopant Fluctuation in Emerging CMOS Technologies

Machine Learning Aided Device Simulation of Work Function Fluctuation for Multichannel Gate-All-Around Silicon Nanosheet MOSFETs