Abstract:We report time-resolved photoluminescence spectra of point defects in amorphous silicon dioxide (silica), in particular the decay kinetics of the emission signals of extrinsic Oxygen Deficient Centres of the second type from singlet and directly-excited triplet states are measured and used as a probe of structural inhomogeneity. Luminescence activity in sapphire ($\alpha$-Al$_2$O$_3$) is studied as well and used as a model system to compare the optical properties of defects in silica with those of defects embedded in a crystalline matrix. Only for defects in silica, we observe a variation of the decay lifetimes with emission energy and a time dependence of the first moment of the emission bands. These features are analyzed within a theoretical model with explicit hypothesis about the effect introduced by the disorder of vitreous systems. Separate estimations of the homogenous and inhomogeneous contributions to the measured emission linewidth are obtained: it is found that inhomogeneous effects strongly condition both the triplet and singlet luminescence activities of oxygen deficient centres in silica, although the degree of inhomogeneity of the triplet emission turns out to be lower than that of the singlet emission. Inhomogeneous effects appear to be negligible in sapphire.

The Excitation Efficiency for Dislocation-Related Luminescence Centers in Silicon with Oxygen Precipitates

Luminescent and Structural Properties of Electron-Irradiated Silicon Light-Emitting Diodes with Dislocation-Related Luminescence

The Origin of 0.78 Ev Line of the Dislocation Related Luminescence in Silicon

Dislocation Luminescence in Nitrogen-Doped Czochralski and Float Zone Silicon

Photoluminescence of Dislocations in Nitrogen Doped Czochralski Silicon

Enhancement of Room Temperature Dislocation-Related Photoluminescence of Electron Irradiated Silicon

Photoluminescence of Dislocations in Czochralski Silicon Induced During Crystal Growth

Fabrication of Light-Emitting Diodes with Dislocation-Related Luminescence by Annealing of Electron-Irradiated Silicon

Temperature Dependence of Sensitized Er3+ Luminescence in Silicon-Rich Oxynitride Films

Structural and Luminescent Properties of Electron-Irradiated Silicon

Photoluminescence from Dislocations in Silicon Induced by Irradiation of Electron Beams

Sensitizing Properties of Luminescence Centers on the Emission of Er3+ in Si-Rich Sio2 Film

Effects of Excess Silicon on the 1540 Nm Er3+ Luminescence in Silicon Rich Oxynitride Films

Effects of Defect, Carrier Concentration and Annealing Process on the Photoluminescence of Silicon Pn Diodes

Research and Application of Luminescence from Defects in Silicon

Dislocation-related electroluminescence of silicon after electron irradiation

Luminescence and photoconductivity properties of porous polycrystalline silicon

Photoluminescence dispersion as a probe of structural inhomogeneity in silica

Enhanced Luminescence of Erbium Doped Ga2O3 Films and Devices by Optimizing Annealing Process

Luminescence of Dislocation Network in Directly Bonded Silicon Wafers

Excitons in Silicon Nanocrystalites: The Nature of Luminescence