A novel 4H–SiC IGBT with double gate PMOS for improving the switch controllability and FBSOA
Lijuan Wu,Deqiang Yang,Guanglin Yang,Dongsheng Zhao,Jie Yuan,Zigui Tu,Mengjiao Liu,Lijuan Wu(吴丽娟),Deqiang Yang(杨德强,Guanglin Yang(杨广林,Dongsheng Zhao(赵东升,Jie Yuan(袁杰,Zigui Tu(涂子归,Mengjiao Liu(刘梦姣
DOI: https://doi.org/10.1016/j.mejo.2024.106187
IF: 1.992
2024-04-02
Microelectronics Journal
Abstract:In this work, a 4H–SiC insulated-gate bipolar transistor (IGBT) with double gate PMOS (DGPMOS) is proposed. In the on-state, DGPMOS IGBT can form a hole barrier, thus reducing the on-state voltage ( V ON). During the turn-on and turn-off transients, DGPMOS IGBT can form the extra hole extraction paths. This helps to reduce the turn-off loss ( E off) and the gate displacement current ( I G_dis). The simulation results show that compared with GS IGBT, the V ON of DGPMOS IGBT is decreased by 58.04% under the same E off. Compared with PMOS IGBT, DGPMOS IGBT achieves better controllability in turn-on d I C/dt and peak turn-on current ( I max). At the same turn-on loss ( E on), the maximum reverse recovery d V KA/dt is lowered by 26.67%, and the electromagnetic interference (EMI) noise is suppressed. In addition, because DGPMOS IGBT has a small saturation current density ( J sat), its forward bias safe operating area (FBSOA) is greatly improved.
engineering, electrical & electronic,nanoscience & nanotechnology