IGBT Overvoltage Suppressing Based on Active Clamping

Lei Ming,Cheng Shanmei,Yu Mengchun,Shen Yongzhe
2012-01-01
Abstract:Based on introducing the overvoltage in the process of the turn off of the insulated gate bipolar transistor(IGBT),the problems of the overvoltage suppressing in the conventional gate driver were analyzed,a new strategy of suppressing the overvoltage which is based on active clamping was proposed.The proposed method of active clamping consists of transient voltage suppressor(TVS) which are located between the collector and the gate.The results of the simulation based on Saber verify that the strategy can clamp the overvoltage to the settled value of the TVS in the process of the turn off of the IGBT,and decrease the overvoltage effectively.
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