Abstract:Short-circuit faults are the most critical failure mechanism in power converters. Among the various short-circuit protection schemes, desaturation protection is the most mature and widely used solution. Due to the lack of gate driver integrated circuit (IC) with desaturation protection for the silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET), the conventional insulated gate bipolar transistor (IGBT) driver IC is normally used as these two devices have similar gate structure and driving mechanism. In this work, a gate driver with desaturation protection is designed for the 1.2-kV/30-A SiC MOSFET and silicon (Si) IGBT with the off-the-shelf driver IC. To further limit voltage-overshoot at the rapid turn-off transient, the active clamping circuit is introduced. Based on the experiments of switching characterization and short-circuit test, the SiC MOSFET shows faster switching speed, more serious electromagnetic interference (EMI) issue, lower switching loss (half), and higher short-circuit current (1.6 times) than the Si IGBT, even with a slower gate driver. Thus, a rapid response speed is required for the desaturation protection circuit of SiC MOSFET. Due to the long delay time of the existing desaturation protection scheme, it is technically difficult to design a sub- μ s protection circuit. In this work, an external current source is proposed to charge the blanking capacitor. A short-circuit time of 0.91 μ s is achieved with a reliable protection. Additionally, the peak current is reduced by 22%.

A Self-Adaptive Blanking Circuit for IGBT Short-Circuit Protection Based on VCE Measurement

An Improved IGBT Short-Circuit Protection Method With Self-Adaptive Blanking Circuit Based on V CE Measurement

A High Speed Short-Circuit Protection Circuit with Current Limitation and Soft Turn-Off for High Power IGBTs

A voltage controlled current source gate drive method for IGBT devices

Design and Performance Evaluation of a Short-circuit Protection Scheme for SiC MOSFETs

A discussion on IGBT short-circuit behavior and fault protection schemes

Study of Accelerated Power Cycling Test of IGBT Power Modules

Soft Shut Down of IGBT Based on Variable Gate Resistances

Advanced Active Gate Drive for Switching Performance Improvement and Overvoltage Protection of High-Power IGBTs

Crosstalk Analysis and Suppression for a Closed-Loop Active IGBT Gate Driver

Analysis of IGBT Pseudodesaturation Effect Caused by Stray Parameters in DC Circuit Breaker

Analysis of Novel 3300V Embedded Ballast Resistor IGBT with Robust Short-circuit Capability

In Situ Diagnosis for IGBT Chip Failure in Multichip IGBT Modules Based on a Newly Defined Characteristic Parameter Low-Sensitive to Operation Conditions

A Novel 3300V Conductivity Modulation Enhanced IGBT with P-type Schottky Contact and Partial N-type Buried Layer

Comparative Design of Gate Drivers with Short-Circuit Protection Scheme for SiC MOSFET and Si IGBT

Tunnel Magnetoresistance-Based Short-Circuit and Over-Current Protection for IGBT Module

Investigation and Classification of Short-Circuit Failure Modes Based on Three-Dimensional Safe Operating Area for High-Power IGBT Modules

Analysis and discussion of false triggering of Vce desaturation protection circuit in a T-type neutral point clamped inverter and its solutions

An IGBT Junction Temperature Evaluation Model for DC Interruption Application

Analysis and Simulation of IGBT Based Switch for Short-Circuit Withstand Test Applications

Indirect IGBT Over-Current Detection Technique Via Gate Voltage Monitoring and Analysis