Abstract:For the promising semiconductor of GaN, the degradation of the GaN-based devices' performance may occur, when they are bombarded by high-energy charged particles in the applications of aerospace, astronomy, and nuclear-related areas. It is thus of great significance to explore the influence of irradiation on the microstructure and electronic properties of GaN and to reveal the internal relationship between the damage mechanisms and physical characteristics. By a combined density functional theory (DFT) and ab initio molecular dynamic (AIMD) study, we explored the low-energy recoil events in GaN and the effects of point defects on GaN. The threshold displacement energies (E d s) show a significant dependence on the recoil directions and the primary knock-on atoms. Moreover, the E d s for nitrogen atoms are smaller than those for gallium atoms, indicating that the displacement of nitrogen dominates under electron irradiation and the created defects are mainly nitrogen vacancy and interstitials. The formation energy of nitrogen vacancy and interstitial is smaller than that for gallium vacancy and interstitial, which is consistent with the AIMD results. Although the created defects improve the elastic compliance of GaN, these radiation damage states deteriorate its ability to resist external compression. Meanwhile, these point defects lead the Debye temperature to decrease and thus increase the thermal expansion coefficients of GaN. As for electronic properties of defective GaN, the point defects have various effects, i.e., V N (N vacancy), Ga int (Ga interstitial), N int (N interstitial), and Ga N (Ga occupying the N lattice site) defects induce the metallicity, and N Ga (N occupying the Ga lattice site) defect decreases the band gap. The presented results provide underlying mechanisms for defect generation in GaN, and advance the fundamental understanding of the radiation resistances of semiconductor materials.

Study of the photoluminescence properties of GaN irradiated with low fluence Ta ions

Au ion irradiation induces ultralow thermal conductivity in GaN

A combined AIMD and DFT study of the low-energy radiation responses of GaN

Micro-Raman and Photoluminescence Studies of Neutron-Irradiated Gallium Nitride Epilayers

A comparative study of the structural and optical properties of Si-doped GaAs under different ion irradiation

Carrier transport and luminescence properties of n-type GaN

Effects of high-energy electron irradiation on blue luminescence of unintentionally doped GaN heterostructure

Effects of Ion Irradiation and Temperature on Mechanical Properties of GaN Single Crystals under Nanoindentation

Nondestructive Spectroscopic Investigation of N-Type 4H-SiC Defects Irradiated With Low Fluence 16.5 MeV/u Ta Ions

Microstructural changes in GaN and AlN under 950 MeV Au swift heavy ion irradiation

Structure and Luminescence of A-Plane GaN on R-Plane Sapphire Substrate Modified by Si Implantation*

Impact of 700keV Ni++ ion irradiation on structural and optical properties of GaN

Electronic and Optical Properties of Energetic Particle-Irradiated In-rich InGaN

Raman Scattering and X-Ray Diffraction Study of Neutron Irradiated GaN Epilayers

Investigation on High-Energy Electron Irradiation on GaN Heterostructure by EBSD

The in-situ luminescence measurements of GaN/Al 2 O 3 film under different energy proton irradiation

Mechanical Properties of GaN Single Crystals Upon C Ion Irradiation: Nanoindentation Analysis

Molecular dynamics simulations and experimental studies on low-temperature growth of GaN

Modification of new photoelectric material GaN by implantation of H+, He+ and N+ ion beam

Study Of Diffusion And Thermal Stability Of Fluorine Ions In Gan By Time-Of-Flight Secondary Ion Mass Spectroscopy

Photoluminescence of Energetic Particle-Irradiated Inxga1-Xn Alloys