Abstract:A novel micromachining technology for multilevel structures of silicon is described in this paper. Complicated multilevel structures can be formed by using a maskless etching following a conventional masked etching in aqueous KOH. The process consists of two successive steps. First, structures with (111) sidewalls are formed for a desired etching depth on the surface of a (100) silicon wafer by a conventional masked anisotropic etching process with a specially designed etching mask. Then, the etching mask is removed except for some areas (such as the frame of the chip) and a maskless etching follows. In addition to the downward etching of the upper and lower (100) planes during maskless etching, fast-etching (311) planes emerge at the upper edges of the (111) sidewalls and cut the (111) sidewalls, while the (111) sidewalls extend downward at the lower ends. As the (311) planes replace the (111) sidewalls with a rate faster than the extension rate of the (111) planes, the (111) sidewalls will finally be replaced by (311) planes. Moreover, by an appropriate mask design and an appropriate etching depth of the previous masked etching, the bottom areas of some etching cavities diminish temporarily so that the downward etching in these areas is stopped for time intervals after the intersection of (111) planes on the bottom and before the (111) planes are replaced completely by the (311) planes. Once the (111) sidewalls are replaced completely by the (311) planes, the bottom areas reappear and the etching downward resumes. Analyses show that levels with different depths can be created in this way for different window apertures and the number, positions as well as the depths of the new levels can be individually decided by the design of the single mask for masked etching and the etch depths of both masked and maskless etching processes. More than 10 interesting multilevel structures with up to five structure levels have been fabricated. The results show that the technology is very versatile and repeatable. Therefore, this technology is a very useful new tool for making silicon micromechanical structures to meet the ever-increasing demands for solid-state sensors and actuators. (C) 1997 Elsevier Science S.A.

Silicon microstructuring technology

Voltage‐ and Metal‐assisted Chemical Etching of Micro and Nano Structures in Silicon: A Comprehensive Review

Microfabrication Technology of Three-Dimensional Microdevices and Their Mems Applications

TECHNOLOGY OF SILICON-BASED MEMS

Silicon as a mechanical material

The Technology of Using Porous Silicon As a Sacrificial Layer in MEMS

Metal Microstructure Microfabrication Technique

Microelectromechanical System Technology and Its Application

High Aspect Ratio Si Etching Technique and Application

A molded surface-micromachining and bulk etching release (MOSBE) fabrication platform on (1 1 1) Si for MOEMS

A novel micromachining technology for multilevel structures of silicon

Materials: Silicon and beyond

Amorphous Silicon Self‐Rolling Micro Electromechanical Systems: From Residual Stress Control to Complex 3D Structures

Design and fabrication of MEMS devices using the integration of MUMPs, trench-refilled molding, DRIE and bulk silicon etching processes

Micromachining of monocrystalline silicon and glass for chemical analysis systems A look into next century's technology or just a fashionable craze?

Micromachining of Multi-Thickness Sensor-Array Structures with Dual-Stage Etching Technology

A CMOS Compatible Process for Monolithic Integration of High-Aspect-ratio Bulk Silicon Microstructures

Advanced plasma processing combined with trench isolation technology for fabrication and fast prototyping of high aspect ratio MEMS in standard silicon wafers

Overview of Non-Traditional Micromachining Technologies

Post-CMOS Process for High-Aspect-ratio Monolithically Integrated Single Crystal Silicon Microstructures

Silicon carbide for microelectromechanical systems