Abstract:A number of computational methods have been developed over the last 40 years to simulate the behavior of solid materials with small dimensions. On the macro-scale, Finite Element analysis calculates mechanical stress on micron-sized cantilevers and motors. On the atomic level, newer ab initio methods compute nuclear and electronic behavior of hundred atom models with unprecedented rigor. By implementing the laws of classic mechanics, empirical Molecular Dynamics (MD) programs help bridge these two computational extremes. MD identifies nonelectronic, particle motion for large 100,000 atom cells with good success. MD derives both equilibrium and nonequilibrium properties for many complex condensed regimes; quantitatively (and qualitatively) reaffirms empirical data; aids discovery of new materials processing techniques, and helps predict unknown physical phenomena often only observable under extreme environmental settings. One material of great technical importance to the semiconductor industry is silicon (Si). This element and its oxide (SiO2) play key roles in Complementary Metal-Oxide Semiconductor (CMOS) integrated circuits and in Silicon on Insulator (SOI) technology. Thousands of publications of the structure and function of Si and SiO2 fill the literature. Hundreds of these employ Molecular Dynamics. Herein, we describe the MD process; its particular application to these two materials; explore past research and propose possible directions for future work. While no review can fully comprehend or thoroughly evaluate the entire bibliographic mass, this report provides a starting point for researchers interested in the field. It attempts to uncomplicate the oft-complex mathematics and physics frequently associated with the subject. Little prior knowledge of classic Molecular Dynamics is needed. Although most information is taken directly from MD-related theory, results from experimental or non-MD-related work are occasionally added to help fill in gaps. Finally, because details of every simulation and experiment cited herein cannot be made, the reader is encouraged to refer to specific bibliographic references whenever necessary.

Silicon as a mechanical material

Silicon microstructuring technology

Silicon: the Semiconductor Material

Materials: Silicon and beyond

Silicon carbide for microelectromechanical systems

Silicon micro- and nanofabrication for medicine

Silicon carbide MEMS for harsh environments

Diamond machining of silicon: A review of advances in molecular dynamics simulation

Amorphous Silicon Self‐Rolling Micro Electromechanical Systems: From Residual Stress Control to Complex 3D Structures

An integrated push-to-pull micromechanical device: Design, fabrication, and in-situ experiment

Functional PDMS Elastomers: Bulk Composites, Surface Engineering, and Precision Fabrication

Empirical Molecular Dynamics Modeling of Silicon and Silicon Dioxide: A Review

Fundamentals of silicon material properties for successful exploitation of strain engineering in modern CMOS manufacturing

Recent advances in microsystem approaches for mechanical characterization of soft biological tissues

Mechanical characterization of biocompatible thin film materials by scanning along micro-machined cantilevers for micro-/nano-system

Effects of Pore Design on Mechanical Properties of Nanoporous Silicon

Polydimethylsiloxane mechanical properties: A systematic review

Strain Engineering and Mechanical Assembly of Silicon/germanium Nanomembranes

Silicon Carbide Technology for Advanced Human Healthcare Applications

Materials Selection In Mechanical Design For Microsensors And Microactuators