Abstract:Cu3SbSe4, featuring its earth-abundant, cheap, nontoxic and environmentally friendly constituent elements, can be considered as a promising intermediate temperature thermoelectric (TE) material. Herein, a series of p-type Bi-doped Cu3Sb1−xBixSe4 (x = 0–0.04) samples were fabricated through melting and hot pressing process, and the effects of isovalent Bi-doping on their TE properties were comparatively investigated by experimental and computational methods. TEM analysis indicates that Bi-doped samples consist of Cu3SbSe4 and Cu2−xSe impurity phases, which is in good agreement with the results of XRD, SEM and XPS. For Bi-doped samples, the reduced electrical resistivity (ρ) caused by the optimized carrier concentrations and enhanced Seebeck coefficient derived from the densities of states near the Fermi level give rise to a high power factor of ~ 1000 µWm−1 K−2 at 673 K for the Cu3Sb0.985Bi0.015Se4 sample. Additionally, the multiscale defects of Cu3SbSe4-based materials involving point defects, nanoprecipitates, amorphous phases and grain boundaries can strongly scatter phonons to depress lattice thermal conductivity (κlat), resulting in a low κlat of ~ 0.53 Wm−1 K−1 and thermal conductivity (κtot) of ~ 0.62 Wm−1 K−1 at 673 K for the Cu3Sb0.98Bi0.02Se4 sample. As a consequence, a maximum ZT value ~ 0.95 at 673 K is obtained for the Cu3Sb0.985Bi0.015Se4 sample, which is ~ 1.9 times higher than that of pristine Cu3SbSe4. This work shows that isovalent heavy element doping is an effective strategy to optimize thermoelectric properties of copper-based chalcogenides.

Highly Effective Solid Solution towards High Thermoelectric and Mechanical Properties in Cu 3 SbSe 4 -Cu 2 GeSe 3 Bulk Materials via Quasi-Homogenization Doping

Light Element Doping and Introducing Spin Entropy: an Effective Strategy for Enhancement of Thermoelectric Properties in BiCuSeO.

Enhancing the effective mass and covalent bond strength of Cu 3 SbSe 4 -based thermoelectric materials by Mn/Sn co-doping

Unlocking the Potential of Cu3SbSe3: Ultralow Thermal Conductivity and Enhanced Thermoelectric Performance

Unconventional Doping Effect Leads to Ultrahigh Average Thermoelectric Power Factor in Cu 3 SbSe 4 ‐Based Composites

Enhancement of the Thermoelectric Performance of Cu 2 GeSe 3 via Isoelectronic (Ag, S)-co-substitution

High Thermoelectric Performance of Cu 3 SbSe 4 Obtained by Synergistic Modulation of Power Factor and Thermal Conductivity

Thermoelectric Performance Enhancement of Cu2S by Se Doping Leading to a Simultaneous Power Factor Increase and Thermal Conductivity Reduction

Band Engineering Through Pb‐Doping of Nanocrystal Building Blocks to Enhance Thermoelectric Performance in Cu3SbSe4

Structural features and thermoelectric performance of Sb- and Bi-doped Cu2SnSe3 compounds

Interface‐Enhanced High‐Temperature Thermoelectricity in Cu1.99Se/B4C Composites with Synergistically Improved Mechanical Strength

Effect of Se - site Doping on Thermoelectric Properties of Cu2SnSe3 Synthesized by Combustion

Enhanced Thermoelectric Properties of Cu3SbSe4 Compounds by Isovalent Bismuth Doping

Doping strategy in metavalently bonded materials for advancing thermoelectric performance

Combination of Carrier Concentration Regulation and High Band Degeneracy for Enhanced Thermoelectric Performance of Cu3SbSe4

High‐Performance GeSe‐Based Thermoelectrics via Cu‐Doping

Doping of thermoelectric PbSe with chemically inert secondary phase nanoparticles

Enhancing the Thermoelectric Performance of Cu1.8S by Sb/Sn Co-Doping and Incorporating Multiscale Defects to Scatter Heat-Carrying Phonons

Enhanced thermoelectric properties of Cu3SbSe4-based materials by synergistic modulation of carrier concentration and phonon scattering

Mn-doping method boosts Se doping concentration in Cu2S towards high thermoelectric performance

Synergistic Effects of Cui Doping on Enhancing Thermoelectric Performance for N-Type Bi 2O 2se Fabricated by Mechanical Alloying